Method for improving optical performance of active matrix miniature LED (light-emitting diode) display

A LED display and active matrix technology, which is applied in the field of improving the optical performance of active matrix micro-LED displays, can solve the problems affecting the optical contrast and image quality of the display, light crosstalk, and light extraction efficiency, etc., so as to reduce the optical crosstalk phenomenon, Increase light extraction efficiency and solve the effect of light dispersion

Inactive Publication Date: 2015-05-13
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology

Due to the large light-emitting angle between adjacent pixels, light crosstalk is very easy to occur, which affects the optical contrast and image quality of the display. A method to improve the optical performance of the active matrix micro-LED display is invented.

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Embodiment Construction

[0032] The present invention will be further described below with reference to the accompanying drawings and examples.

[0033] Such as Figure 1-4 shown.

[0034] A method for improving the optical performance of an active matrix micro-LED display, comprising the steps of:

[0035] 1) On a transparent sapphire substrate, epitaxially grow a lattice buffer layer, an N layer, a multiple quantum well (MQW), a P layer, and a current spreading layer in sequence to form an LED epitaxial wafer; the LED epitaxial wafer includes but is not limited to the following epitaxial wafers: Chip type: GaN-based LED blue epitaxial wafer, GaN-based blue-green epitaxial wafer, AlGaInP-based epitaxial wafer, etc.; the current spreading layer includes but is not limited to the following transparent or translucent conductive film materials: indium tin oxide (ITO), Nickel-gold composite layer (Ni / Au), doped zinc oxide (AZO), etc.;

[0036] 2) Sequentially adopt photolithography and dry etching proc...

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Abstract

The invention discloses a method for improving the optical performance of an active matrix miniature LED (light-emitting diode) display, and relates to an active matrix miniature LED display manufacturing process. The process method particularly includes the steps: preparing miniature optical structures in one-to-one correspondence to light-emitting pixels on a light-emitting surface of a sapphire substrate of the active matrix miniature LED display; controlling and optimizing the light-emitting direction of the light-emitting pixels. By the aid of the miniature optical structure process, the problems such as large light-emitting angle of LED light-emitting pixels and serious crosstalk of adjacent pixels can be obviously solved, and the contrast of the display is improved. Besides, by the aid of a novel light-emitting surface formed by the miniature optical structures, the light extraction rate of the LED light-emitting pixels can be increased, and the brightness of the display is improved. The miniature optical structure process is simple, key optical parameters such as the contrast and the brightness of the active matrix miniature LED display can be effectively optimized, and the optical performance of the active matrix miniature LED display is improved.

Description

technical field [0001] The invention relates to the field of micro-display technology, in particular to a process method for improving the optical performance of an active matrix micro-LED display. The active-matrix micro-LED display prepared by this process is a highly integrated high-brightness micro-display technology, which can be used in Micro projection display, industrial display and other related fields. Background technique [0002] Micro-display applications such as micro-projection displays or industrial displays hope to obtain high-brightness display effects. At present, the image brightness of typical reflective LCOS and transmissive TFT-LCD micro-display products on the market depends on the LED backlight module. After the backlight passes through the polarizer, color filter film, liquid crystal and optical system, the light intensity will be lost. More than 90%, generally difficult to reach 10000cd / m 2 . Insufficient brightness limits the application fields...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15
Inventor 李超杨洪宝张白雪杨淼
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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