Frequency-tunable MEMS filter

A filter and frequency technology, applied in waveguide-type devices, instruments, electro-solid devices, etc., can solve the problems of reducing device performance, increasing device parasitics, reducing costs, etc., achieving easy large-scale manufacturing, reducing complexity, The effect of improving integration and performance

Active Publication Date: 2015-05-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

Taking advantage of the small size and integration characteristics of MEMS devices, multiple filters with different frequency characteristics are usually integrated on a single chip, and a switch is used to switch between a single filter to meet different communication standards, but this method requires A large number of highly selective filters are connected in parallel, which will not only increase the parasitic effect of the device, reduce the performance of the device, but also go against the further miniaturization and cost reduction of the system
In addition, by connecting multiple filters with different frequencies in parallel to form a multi-order filter, using the self-switching characteristics of the filter unit itself, different parallel combinations between filter units can be realized, thereby achieving different frequency band outputs, but this method also requires a parallel combination of multiple filters

Method used

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Embodiment Construction

[0025] The present invention provides a frequency-tunable MEMS filter, as shown in Figure 1(a), specifically comprising:

[0026] A plurality of resonance units 1, the material of the resonance units 1 is silicon-based material, piezoelectric material or sapphire, and the materials and geometric dimensions of each resonance unit 1 are the same, and the plurality of resonance units 1 pass through the support beams or anchor points at the vibration displacement nodes 5 supports; a plurality of coupling beams 4, the two ends of each coupling beam 4 are connected to the adjacent resonant unit 1, the materials of the coupling beam 4 and the resonant unit 1 can be the same or different, through the coupling beam 4 to the resonant unit 1 The coupling effect makes the resonant unit 1 group produce multi-order vibration modes, in which each resonant unit 1 works in the same mode, and the vibration phases of adjacent resonant units 1 can be in the same phase or reversed phase, and each v...

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Abstract

A frequency-tunable MEMS filter comprises a plurality of resonant units, a plurality of coupling beams, and a plurality of electrodes. The resonant units are supported by supporting beams or anchor points at vibration displacement nodes. The two ends of each coupling beam are connected to the adjacent resonant units. The electrodes are disposed around the resonant units, and a gap is left between each electrode and the corresponding resonant unit. The frequency-tunable MEMS filter of the invention is applicable to the radio-frequency front end of a transceiver system with multiple frequency band selection functions, and meets the application requirement of a future wireless communication system for multiple bands, multiple functions and multiple modes.

Description

technical field [0001] The present invention relates to the field of radio frequency micro-electromechanical (RF MEMS) technology, and more particularly, the present invention relates to a radio frequency micro-mechanical resonant device, especially a frequency-tunable MEMS filter. Background technique [0002] In the current wireless communication system application, the filter, as one of the main components, plays a vital role. During the signal transmission process, it performs necessary selection and filtering processing on the transmission signal through its own frequency characteristics. , in order to obtain the desired frequency band signal, while avoiding the interference of signals of other frequency bands and external signals. Currently widely used filter devices include quartz crystals, ceramic filters, surface acoustic wave (SAW) filters, and now bulk acoustic wave (FBAR) filters, although they can achieve the high Q values ​​(500- 10000), but they are all off-c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/20B81B7/00
Inventor 骆伟袁泉赵晖杨晋玲杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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