Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of growing high reliability igbt terminal protection ring

A terminal protection ring and protection ring technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the withstand voltage characteristics and reliability of IGBT devices, so as to optimize the leakage characteristics, improve the withstand voltage characteristics, The effect of ensuring pressure resistance

Active Publication Date: 2017-10-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Figure 1-2 Because there are a lot of Dislocation (lattice dislocations) at the terminal of the current process, it will seriously affect the withstand voltage characteristics and reliability of IGBT devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of growing high reliability igbt terminal protection ring
  • Method of growing high reliability igbt terminal protection ring
  • Method of growing high reliability igbt terminal protection ring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The method for growing a high-reliability IGBT (insulated gate bipolar transistor) terminal guard ring of the present invention comprises the steps of:

[0031] 1) On the silicon substrate 1, use a diffusion furnace tube or various chemical vapor deposition (CVD) to grow the first thermal oxide layer 2 as a protective ring implant barrier layer (such as image 3 shown);

[0032] Wherein, the growth temperature is 900-1300° C. (for example, 1100° C.); the thickness of the thermal oxide layer is 1000-10,000 angstroms (for example, 5000 angstroms, medium film thickness).

[0033] 2) Using wet etching or a combination of dry etching and wet etching, etch the protective ring into the barrier layer (ie, the first thermal oxide layer 2), and etch to the surface of the silicon substrate, thereby opening guard ring injection window (eg Figure 4 shown).

[0034] 3) Perform guard ring injection at the guard ring injection window (such as Figure 5 shown);

[0035] Among them...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for growing a high-reliability IGBT terminal guard ring, comprising: 1) growing a first thermal oxide layer on a silicon substrate as a guard ring injection barrier layer; 2) etching the guard ring injection barrier layer, Open the guard ring injection window; 3) Perform guard ring injection in the guard ring injection window; 4) Perform high-temperature heat treatment, and grow the second thermal oxide layer again, and use the first thermal oxide layer and the second thermal oxide layer as subsequent guard rings field plate; 5) etching the protective ring field plate to form a protective ring structure. The invention ensures the voltage resistance, optimizes the leakage characteristics of the cell terminal after voltage resistance, avoids its breakdown, and improves the reliability of the IGBT device.

Description

technical field [0001] The invention relates to a method for growing an IGBT (insulated gate bipolar transistor) terminal protection ring, in particular to a method for growing a high-reliability IGBT terminal protection ring. Background technique [0002] Among various semiconductor device structures, the IGBT (Insulated Gate Bipolar Transistor) device is currently the device that withstands the largest operating voltage due to its unique structure. Its high-voltage characteristics make it a mainstream power device in a high-voltage and high-current working environment. be lacked. In its unique device structure, there is a high voltage directly between the peripheral terminal of the cell and the silicon substrate, which is where device breakdown first occurs, and the protection of its terminal is an important guarantee for the high voltage resistance of the IGBT device. Figure 1-2 Because there are a lot of Dislocation (lattice dislocations) at the terminal of the current ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331
Inventor 李琳松
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP