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Bismuth ferrite-based high-temperature piezoelectric and dielectric energy storage ceramics and preparation method thereof

A technology of high-temperature piezoelectric and dielectric ceramics, applied to ceramics, inorganic insulators, etc., to achieve the effects of controllable composition and structure gradients, fine and uniform grains, and short holding time

Inactive Publication Date: 2016-09-14
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] So far, there have been no reports on bismuth ferrite-based lead-free ceramic materials with high-temperature piezoelectric properties and high energy storage density and their preparation methods

Method used

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  • Bismuth ferrite-based high-temperature piezoelectric and dielectric energy storage ceramics and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The preparation ingredients are: (1- u )BiFe 1-x Ga x o 3 – u BaTi 1-y (Zn 1 / 3 Nb 2 / 3 ) y o 3 ,in x =0.15, y =0.05, u =0.25 for ceramic materials.

[0023] The preparation method comprises the following steps:

[0024] (1) To analyze pure powder Bi 2 o 3 , Ga 2 o 3 , Nb 2 o 5 , ZnO, BaCO 3 , Fe 2 o 3 and TiO 2 As raw material, according to the chemical formula BiFe 1-x Ga x o 3 with BaTi 1- y (Zn 1 / 3 Nb 2 / 3 ) y o 3 For batching, use absolute ethanol as the medium for ball milling for 12 hours, dry at 80°C and place in an alumina crucible, BiFe 1-x Ga x o 3 Pre-synthesized powder at 800°C for 2 hours, BaTi 1- y (Zn 1 / 3 Nb 2 / 3 ) y o 3 Pre-fired at 1000°C for 2 hours to synthesize powder.

[0025] (2) The pre-fired powder BiFe in step (1) 1-x Me x o 3 with BaTi 1- y (Zn 1 / 3 Nb 2 / 3 ) y o 3 , according to the chemical formula (1- u )BiFe 1-x Ga x o 3 – u BaTi 1- y (Zn 1 / 3 Nb 2 / 3 ) y o 3 , x , y 、u...

Embodiment 2

[0031] The preparation ingredients are: (1- u )BiFe 1-x Al x o 3 – u BaTi 1-y (Zn 1 / 3 Nb 2 / 3 ) y o 3 ,in x =0.05, y =0.08, u =0.28 for ceramic materials.

[0032] The preparation method is the same as in Example 1, except that the sintering temperature is 950°C.

[0033] The performance is shown in Table 1.

Embodiment 3

[0035] The preparation ingredients are: (1- u )BiFe 1-x (Al 0.5 Ga 0.5 ) x o 3 – u BaTi 1-y (Zn 1 / 3 Nb 2 / 3 ) y o 3 ,in x =0.06, y =0.12, u =0.32 for ceramic materials.

[0036] The preparation method is the same as in Example 2.

[0037] The performance is shown in Table 1.

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Abstract

The invention discloses a bismuth-ferrite-based high-temperature piezoelectric and high-energy-storage density lead-free dielectric ceramic material. The material comprises components which are expressed by a general formula of (1-u)BiFe1-xMexO3-uBaTi1-yZn1 / 3Nb2 / 3)yO3, wherein Me is one or two of trivalent metallic elements Al, Ga, Y, Sc, Cr and Co; x, y and u represent mole fractions; x is greater than or equal to 0.01 and less than or equal to 0.4; y is greater than or equal to 0.01 and less than or equal to 0.3; u is greater than or equal to 0.1 and less than or equal to 0.5. With combination of a stepwise synthesis method and a microwave sintering method, the uniform and compact ceramic with controllable component structure gradient is produced; the ceramic is excellent in energy storage density, high piezoelectric constant and high Curie temperature; the energy storage density can reach 0.9J / cm<3>; the piezoelectric constant d33 can reach 236pm / V; the strain can reach 0.19%; the Curie temperature can reach 452 DEG C; the ceramic is low in strain hysteresis and high in practicability.

Description

technical field [0001] The invention relates to a piezoelectric and dielectric energy storage ceramic material, in particular to a bismuth ferrite-based high-temperature piezoelectric and dielectric energy storage lead-free ceramic material and a preparation method thereof. Background technique [0002] With the development of science and technology, the development of new micro-displacement materials with miniaturization, high precision, and large strain at the sub-micron level has become the need of the times. Piezoelectric ceramics have the advantages of high response frequency, fast response, large driving force, and good linearity, and are often used as drivers and micro-displacement measurement materials in micro-mechanical design. Lead-based piezoelectric ceramics are widely used in brakes, micro-displacers and precision electronic components due to their good piezoelectricity and large strain. However, lead-based ceramics contain a large amount of lead, which is har...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B3/12C04B35/26C04B35/468C04B35/64C04B35/622
Inventor 周昌荣黎清宁许积文袁昌来曾卫东陈国华
Owner GUILIN UNIV OF ELECTRONIC TECH