A three-level dual-resonant converter based on silicon carbide mosfet

A converter, three-level technology, applied in the direction of DC power input conversion to DC power output, AC power input conversion to DC power output, electrical components, etc., can solve the problem of large reverse recovery loss and high peak shutdown voltage , Converter efficiency changes and other issues, to achieve the effect of reducing current stress, narrow range of changing frequency, reducing current stress and switching loss

Active Publication Date: 2019-02-05
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The three-level converter with pulse width modulation can realize ZVS soft switching of semiconductor power devices, but it cannot realize soft switching in the full load range
When the input voltage range is wide, the efficiency of the converter changes significantly; when the diode is turned off, due to the influence of the reverse recovery characteristic, the reverse recovery loss is large and the turn-off voltage peak is high

Method used

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  • A three-level dual-resonant converter based on silicon carbide mosfet
  • A three-level dual-resonant converter based on silicon carbide mosfet
  • A three-level dual-resonant converter based on silicon carbide mosfet

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Embodiment Construction

[0035] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0036] The present invention provides a three-level double-resonant converter based on silicon carbide MOSFETs, which combines the application of three-level converters and silicon carbide MOSFET devices, and fully utilizes the advantages of silicon carbide MOSFET devices in high-frequency and high-voltage applications. Advantage. In applications with a wide input voltage range of 1000~1200, the soft switching of silicon carbide MOSFET is realized, and the efficiency of the converter is improved.

[0037] 1. The silicon carbide ...

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Abstract

The present invention provides a three-level dual-resonant converter based on silicon carbide MOSFETs, including a switch unit, a resonant unit and a load unit; the resonant unit includes a first resonant circuit and a second resonant circuit connected in parallel; Full bridge circuit, filter capacitor Co and load resistor RLd; the full bridge circuit is connected to the secondary winding of the transformer. Compared with the prior art, the present invention provides a silicon carbide MOSFET-based three-level double-resonant converter, which can reduce the current and voltage stress and switching loss of the silicon carbide MOSFET, and improve the overall efficiency of the converter.

Description

technical field [0001] The invention relates to a resonant converter, in particular to a three-level double resonant converter based on silicon carbide MOSFETs. Background technique [0002] With the emergence of silicon carbide (Silicon Carbide, SiC) MOSFETs, the characteristics of wide-bandgap semiconductor power devices have been improved, and commercialization has gradually begun. At present, the breakdown voltage of the commercial single SiC MOSFET with better performance is 1200V, its on-resistance is small, its turn-off speed is fast, its on-state loss and turn-off loss are low, but its turn-on speed has not been improved, and its switching loss is relatively high. Big. To increase the switching frequency of SiC MOSFETs, a converter topology with soft switching characteristics will be used. [0003] Due to the low voltage level of the current SiC MOSFET, it is difficult to use it directly in high-voltage applications (such as three-phase power systems, fuel cell sys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/483
CPCH02M3/33523H02M1/0054Y02B70/10Y02P80/10
Inventor 王江波梁美李艳游小杰郭希铮李虹
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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