A three-level dual-resonant converter based on silicon carbide mosfet

A converter, three-level technology, applied in the direction of DC power input conversion to DC power output, AC power input conversion to DC power output, electrical components, etc., can solve the problem of large reverse recovery loss and high peak shutdown voltage , Converter efficiency changes and other issues, to achieve the effect of reducing current stress, narrow range of changing frequency, reducing current stress and switching loss
CN104660079BActive Publication Date: 2019-02-05GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
Publication Date
2019-02-05

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Abstract

The present invention provides a three-level dual-resonant converter based on silicon carbide MOSFETs, including a switch unit, a resonant unit and a load unit; the resonant unit includes a first resonant circuit and a second resonant circuit connected in parallel; Full bridge circuit, filter capacitor Co and load resistor RLd; the full bridge circuit is connected to the secondary winding of the transformer. Compared with the prior art, the present invention provides a silicon carbide MOSFET-based three-level double-resonant converter, which can reduce the current and voltage stress and switching loss of the silicon carbide MOSFET, and improve the overall efficiency of the converter.
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Description

technical field

[0001] The invention relates to a resonant converter, in particular to a three-level double resonant converter based on silicon carbide MOSFETs. Background technique

[0002] With the emergence of silicon carbide (Silicon Carbide, SiC) MOSFETs, the characteristics of wide-bandgap semiconductor power devices have been improved, and commercialization has gradually begun. At present, the breakdown voltage of the commercial single SiC MOSFET with better performance is 1200V, its on-resistance is small, its turn-off speed is fast, its on-state loss and turn-off loss are low, but its turn-on speed has not been improved, and its switching loss is relatively high. Big. To increase the switching frequency of SiC MOSFETs, a converter topology with soft switching characteristics will be used.

[0003] Due to the low voltage level of the current SiC MOSFET, it is difficult to use it directly in high-voltage applications (such as three-phase power systems, fuel cell sys...

Claims

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