3D integrated framework of ultrahigh frequency power converter

Abstract

The invention provides a 3D integrated framework of an ultrahigh frequency power converter. The 3D integrated framework comprises a PCB circuit layer and a winding unit erected on the PCB circuit layer. The winding unit is connected with the PCB circuit layer through a wire. The winding unit comprises winding layers formed on a first insulating layer and a first soft magnetic thin film layer formed on a second insulating layer. The first soft magnetic thin film layer is arranged below the winding layers in a laminated mode to be used for achieving magnetic shielding between the winding layers and the PCB circuit layer. Compared with the prior art, by the adoption of 3D integration, the size of the converter is reduced, and the power density is increased; soft magnetic materials are adopted to form the magnetic shielding layer, magnetic field interference between windings and the PCB circuit layer and between the windings and external metal is solved, the Q value of the windings is increased, the alternating current resistance and high-frequency loss of an inductor and a transformer are reduced, and the working efficiency of the converter is improved; a plane magnetic element is further adopted, and the miniaturization and flattening of products are guaranteed; temperature rising of the magnetic element is reduced greatly, and the working environment of a semiconductor device is improved.

Description

technical field [0001] The invention belongs to the technical field of power conversion, and particularly relates to a 3D integrated architecture of an ultra-high frequency power converter. Background technique [0002] With the rapid development of new semiconductor devices such as GaN and SiC, power converters are developing towards miniaturization and flattening. The operating frequency of traditional power converters is generally tens of thousands to hundreds of kilohertz, and the dynamic response is slow. At the same time, the volume and weight of energy storage components (such as capacitors and inductors) are relatively large, which reduces the power density of the converter. The improvement of the working frequency of the converter can effectively reduce the volume and weight of the energy storage element. Therefore, the high frequency and high power density of the converter are the development trends of the power converter. [0003] With the increase of the working...

AI Technical Summary

Problems solved by technology

But this approach brings another problem: there is interference between the magnetic field of the air-core inductor and the PCB copper, which makes the Q value of the inductor continue to decline

These parasitic parameters will cause large switching loss and voltage and current stress at the moment of switching of the semiconductor switching device

Taking the parasitic inductance of the drain of the switching tube as an example, since the current suddenly drops to zero when it is turned off, its di / dt is very large, according to The drain of the switch tube produces a large voltage drop, which may cause false conduction of the switch tube

Similarly, the parasitic inductance of the switch tube drain will cause a large voltage spike at the moment the switch tube is turned off, increasing the voltage stress of the device

On the other hand, these parasitic parameters will interfere with the resonance of the resonant components in the circuit and affect the working state of the circuit

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