Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphene/Cu/Ni composite electrode and preparation method thereof

A composite electrode and graphene technology, applied in battery electrodes, circuits, electrical components, etc., can solve problems affecting the application of graphene and damage the quality of graphene, and achieve smooth metal substrate surface, good protection effect, and reduce the number of effects

Active Publication Date: 2015-06-03
HUAZHONG UNIV OF SCI & TECH
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the complex and destructive graphene transfer and patterning process will seriously damage the quality of graphene, resulting in redundant defects, which will affect the application of graphene in metal electrode anticorrosion.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene/Cu/Ni composite electrode and preparation method thereof
  • Graphene/Cu/Ni composite electrode and preparation method thereof
  • Graphene/Cu/Ni composite electrode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] Such as figure 1 Shown, the preparation method of the graphene / Cu / Ni composite electrode of an embodiment of the present invention comprises the steps:

[0038] (1) Deposit a layer of Ni film 3 on the substrate 1, and then deposit a layer of Cu film 4 on the Ni film 3 to obtain a Cu / Ni composite metal substrate.

[0039] Wherein, the substrate can generally be Si, glass and the like.

[0040] Preferably, the thickness ratio of the Ni film to the Cu film is 1:(3˜10).

[0041] (2) Graphene thin film 5 is grown on Cu / Ni composite metal substrate by CVD method.

[0042] Step (2) further comprises the steps:

[0043] (A1) in Ar and H 2 In a mixed atmosphere, raise the temperature to 400°C to 800°C, and keep it warm for 3h to 5h.

[0044] (A2) Continue to heat up to 1000°C to 1050°C.

[0045] (A3) Introduce hydrocarbons as a carbon source, and keep warm for 15 minutes to 30 minutes.

[0046] Among them, hydrocarbons can usually be CH 4 、C 2 h 4 Wait.

[0047] (A4) ...

Embodiment 1

[0063] A 300nm thick Ni film was sputter deposited on the Si substrate, and then a 900nm thick Cu film was sputtered on the Ni film (the thickness ratio of the Ni film to the Cu film was 1:3) to obtain a Cu / Ni composite metal substrate; the Cu / Ni composite metal substrate in Ar and H 2 In a mixed atmosphere, the temperature was raised to 400°C and kept for 5 hours, then the temperature was continued to 1000°C, and CH 4 As a carbon source, keep warm for 30min, and finally in Ar and H 2 In a mixed atmosphere of , the temperature was lowered to room temperature to grow graphene films on Cu / Ni composite metal substrates.

Embodiment 2

[0065] A 100nm thick Ni film was sputter deposited on the Si substrate, and then a 1μm thick Cu film was sputtered on the Ni film (the thickness ratio of the Ni film to the Cu film was 1:10) to obtain a Cu / Ni composite metal substrate; the Cu / Ni composite metal substrate in Ar and H 2 In a mixed atmosphere, the temperature was raised to 800°C and kept for 3 hours, then the temperature was continued to 1050°C, and CH 4 As a carbon source, keep warm for 15min, and finally in Ar and H 2 In a mixed atmosphere of , the temperature was lowered to room temperature to grow graphene films on Cu / Ni composite metal substrates.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a graphene / Cu / Ni composite electrode and a preparation method thereof. The composite electrode comprises a Cu / Ni alloy layer and a graphene film covering the Cu / Ni alloy layer, wherein the Cu / Ni alloy layer is formed by mutual diffusion of Ni atoms and Cu atoms of an Ni film and a Cu film covering the Ni film, and the thickness ratio of the Ni film to the Cu film is in a range of 1:(3-10). According to the graphene / Cu / Ni composite electrode and the preparation method thereof, damage caused by a graphene transfer process and a graphical process to the quality of graphene is avoided, the number of graphene defects is decreased, thicknesses of the Ni film and the Cu film are adjusted, a temperature-gradient CVD (chemical vapor deposition) technology is adopted, the high-quality graphene is obtained, the protection capability of the graphene to a Cu / Ni alloy is enhanced, and the obtained composite electrode has the excellent corrosion resistance.

Description

technical field [0001] The invention belongs to the technical field of metal electrode protection, and more specifically relates to a graphene / Cu / Ni composite electrode and a preparation method thereof. Background technique [0002] Cu / Ni composite metals are easy to shape, process and weld, and are widely used as electrodes in metal interconnects, aircraft components, implants and other devices. Graphene is a two-dimensional single atomic layer material, which is widely used because of its excellent mechanical, optical, electrical, chemical stability, etc., especially its good chemical stability, which can be used as an anti-corrosion material to protect Cu / Ni Composite metal electrodes. [0003] However, studies have shown that serious corrosion of the underlying metal will occur at the defects of graphene, and high-quality, defect-free single-layer graphene can effectively reduce the occurrence of corrosion. At present, CVD technology is often used to prepare large-area...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/38
CPCH01M4/38Y02E60/10
Inventor 周文利李阳辛超朱宇
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products