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A kind of negative temperature coefficient film thermistor and its preparation method and its resistance value adjustment method

A technology of thin film thermistor and negative temperature coefficient, which is applied in the direction of resistors with negative temperature coefficient, etc., can solve the problems of high resistance value, high aging coefficient, and restricted development, and achieve low resistance value, low aging coefficient, and improved Effect of Aging Properties

Active Publication Date: 2017-12-22
DONGGUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And because Mn-Co-Ni-O thin film thermistor has the shortcoming of high resistance value, and Mn-Co-Ni-Cu-O quaternary thin film thermistor has the shortcoming of high aging coefficient, therefore, limit Mn-Co- Development of two single-layer thin film thermistors, Ni-O ternary thin film thermistor and Mn-Co-Ni-Cu-O quaternary thin film thermistor

Method used

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  • A kind of negative temperature coefficient film thermistor and its preparation method and its resistance value adjustment method
  • A kind of negative temperature coefficient film thermistor and its preparation method and its resistance value adjustment method

Examples

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Embodiment 1

[0049] See figure 1 . A negative temperature coefficient thin film thermistor, comprising a substrate 1, a bottom Mn-Co-Ni-O ternary transition metal oxide film layer 2, an intermediate layer Mn-Co-Ni-Cu-O quaternary from bottom to top A transition metal oxide film layer 3 , a top Mn-Co-Ni-O ternary transition metal oxide film layer 4 and an electrode 5 . In this embodiment, the substrate is Pt / TiO 2 / Ti / SiO 2 / Si substrate.

[0050] Among them, the bottom Mn-Co-Ni-O ternary transition metal oxide film layer, the middle layer Mn-Co-Ni-Cu-O quaternary transition metal oxide film layer, the top layer Mn-Co-Ni-O ternary transition metal oxide film layer, and the top layer Mn-Co-Ni-O ternary transition metal oxide film layer The metal oxide film layer has a sandwich structure, so that the negative temperature coefficient thin film thermistor has the advantages of low resistance value and low aging coefficient.

Embodiment 2

[0052] See figure 1 . A negative temperature coefficient thin film thermistor, comprising a substrate 1, a bottom Mn-Co-Ni-O ternary transition metal oxide film layer 2, an intermediate layer Mn-Co-Ni-Cu-O quaternary from bottom to top A transition metal oxide film layer 3 , a top Mn-Co-Ni-O ternary transition metal oxide film layer 4 and an electrode 5 . In this embodiment, the substrate is a Si substrate.

[0053] Among them, the bottom Mn-Co-Ni-O ternary transition metal oxide film layer, the middle layer Mn-Co-Ni-Cu-O quaternary transition metal oxide film layer, the top layer Mn-Co-Ni-O ternary transition metal oxide film layer, and the top layer Mn-Co-Ni-O ternary transition metal oxide film layer The metal oxide film layer has a sandwich structure, so that the negative temperature coefficient thin film thermistor has the advantages of low resistance value and low aging coefficient.

Embodiment 3

[0055] See figure 1 . A negative temperature coefficient thin film thermistor, comprising a substrate 1, a bottom Mn-Co-Ni-O ternary transition metal oxide film layer 2, an intermediate layer Mn-Co-Ni-Cu-O quaternary from bottom to top A transition metal oxide film layer 3 , a top Mn-Co-Ni-O ternary transition metal oxide film layer 4 and an electrode 5 . In this embodiment, the substrate is Al 2 o 3 substrate.

[0056] Among them, the bottom Mn-Co-Ni-O ternary transition metal oxide film layer, the middle layer Mn-Co-Ni-Cu-O quaternary transition metal oxide film layer, the top layer Mn-Co-Ni-O ternary transition metal oxide film layer, and the top layer Mn-Co-Ni-O ternary transition metal oxide film layer The metal oxide film layer has a sandwich structure, so that the negative temperature coefficient thin film thermistor has the advantages of low resistance value and low aging coefficient.

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Abstract

The invention relates to the technical field of thin film thermistors, in particular to a negative temperature coefficient thin film thermistor, a preparation method thereof and a method for adjusting resistance value thereof. A kind of negative temperature coefficient thin film thermistor is characterized in that: from bottom to top successively comprises substrate, bottom Mn-Co-Ni-O ternary transition metal oxide film layer, middle layer Mn-Co-Ni-Cu-O Quaternary transition metal oxide film layer, top Mn‑Co‑Ni‑O ternary transition metal oxide film layer and electrodes; the NTC thin film thermistor exhibits Mn‑Co‑Ni‑O / Mn‑Co‑Ni ‑Cu‑O / Mn‑Co‑Ni‑O sandwich structure. The resistance value of the negative temperature coefficient thin film thermistor prepared by the present invention is adjustable from about 1.0 to 4.2 MΩ, and the aging coefficient is less than 4%, so that the negative temperature coefficient thin film thermistor has the advantages of low resistance value and low aging coefficient .

Description

technical field [0001] The invention relates to the technical field of thin film thermistors, in particular to a negative temperature coefficient thin film thermistor, a preparation method thereof and a method for adjusting resistance value thereof. Background technique [0002] Negative temperature coefficient (NTC) thermistors are widely used in temperature sensing and control of household appliances, automobiles, and industrial production equipment due to their high sensitivity, high reliability, and low price. Since the trend of miniaturization of electronic components has also extended to the field of sensors, thin film thermistors have followed this trend and have developed tremendously in the past 10 years. Compared with discrete thermistors, thin film thermistors have outstanding advantages such as fast response, low operating voltage, and low heat treatment temperature. At present, the development speed of thin film thermistor has far exceeded the traditional discr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/04
Inventor 何林杨雷黄金奖
Owner DONGGUAN UNIV OF TECH
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