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Boron carbide gradient coating used in quartz substrate and preparation method thereof

A gradient coating, boron carbide technology, applied in metal material coating process, coating, fusion spraying and other directions, can solve the problem of low bonding strength between corrosion-resistant ceramic coating and quartz cover, so as to improve the bonding strength, eliminate the interface effect

Inactive Publication Date: 2015-06-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, B produced by atmospheric plasma spraying 4 C The bonding strength between the corrosion-resistant ceramic coating and the quartz cover is not high, so it is necessary to find a way to improve its bonding strength with the quartz substrate

Method used

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  • Boron carbide gradient coating used in quartz substrate and preparation method thereof
  • Boron carbide gradient coating used in quartz substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The present embodiment provides a boron carbide gradient coating applied to a quartz substrate, comprising a first coating, a second coating and a boron carbide coating that are sprayed on the surface of the quartz substrate from bottom to top; the first coating consists of The silicon dioxide powder of the first percentage content and the boron carbide powder of the second percentage content are mixed and sprayed, wherein the first percentage content is 100%, and the second percentage content is 0, that is, the first coating is made of 100% silicon dioxide powder (pure silicon dioxide powder) is sprayed; the second coating is sprayed by mixing the third percent silicon dioxide powder and the fourth percent boron carbide powder, of which the first The three percent content is 80%, and the fourth percent content is 20%, that is, the second coating is sprayed by 80% silicon dioxide powder and 20% boron carbide powder; the boron carbide coating is pure boron carbide Powder...

Embodiment 2

[0035] The present embodiment provides a boron carbide gradient coating applied to a quartz substrate, comprising a first coating, a second coating and a boron carbide coating that are sprayed on the surface of the quartz substrate from bottom to top; the first coating consists of 60% silicon dioxide powder and 40% boron carbide powder are sprayed; the second coating is sprayed by 40% silicon dioxide powder and 60% boron carbide powder; the boron carbide coating is pure boron carbide powder Sprayed.

[0036] This embodiment also provides a method for preparing a boron carbide coating applied to a quartz substrate, comprising the steps of:

[0037] (1) Choose 60% SiO2 2 powder and 40%B 4 The first mixed powder made by mixing C powder, 40% SiO 2 powder and 60%B 4 C powder mixed with the second mixed powder and pure B 4 C powder, the particle size range of the first mixed powder, the second mixed powder and pure boron carbide powder is 5-50 μm, and the powder should have goo...

Embodiment 3

[0042] Such as figure 1 As shown, the present embodiment takes a six-layer gradient coating as an example to provide a boron carbide gradient coating applied to a quartz substrate, including a first coating 101 sprayed on the surface of a quartz substrate 100 from bottom to top, The second coating 102, the third coating 103, the fourth coating 104, the fifth coating 105 and the boron carbide coating 106; the first coating 101 is formed by spraying 100% silicon dioxide powder, and the second coating Layer 102 is formed by spraying 80% silicon dioxide powder and 20% boron carbide powder; the third coating 103 is formed by spraying 60% silicon dioxide powder and 40% boron carbide powder; the fourth coating 104 It is sprayed with 40% silicon dioxide powder and 60% boron carbide powder; the fifth coating 105 is sprayed with 20% silicon dioxide powder and 80% boron carbide powder; the boron carbide coating 106 is pure Boron carbide powder sprayed.

[0043] Such as figure 2 As sh...

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Abstract

The invention relates to the technical field of semiconductor etching machine inner liner and quartz surface corrosion prevention treatment, and specifically relates to a boron carbide gradient coating used in a quartz substrate. The coating includes a first coating, a second coating and a boron carbide coating, the quartz substrate surface is successively sprayed with the first coating, the second coating and the boron carbide coating, the first coating is obtained by mixed spraying of first percent content of silica powder and second percent content of boron carbide powder, and the sum of the first percent content and the second percent content is 100%; the second coating is obtained by mixed spraying of third percent content of silica powder and fourth percent content of boron carbide powder, and the sum of the third percent content and the fourth percent content is 100%; and the boron carbide coating is obtained by spraying of pure boron carbide powder, wherein the third percent content is less than the first percent content. The invention also relates to a preparation method of the boron carbide gradient coating. The component and structure gradient change of the boron carbide gradient coating can reduce or eliminate the interface, physical mutation and interface stress, and improve the interface bonding strength between the quartz substrate and the boron carbide coating.

Description

technical field [0001] The invention relates to the technical field of semiconductor etching machine inner lining and quartz surface anticorrosion treatment, in particular to a boron carbide gradient coating applied to a quartz substrate and a preparation method thereof. Background technique [0002] At present, the low-temperature plasma microfabrication method is the key technology for micro-nano processing of materials. It is the basis of preparation technologies such as microelectronics, optoelectronics, micromechanics, and micro-optics. One of the processes is completed by means of plasma processing, such as plasma film deposition, plasma etching, and plasma deglue. Among them, plasma etching is one of the most critical processes, and it is an irreplaceable process to realize the high-fidelity transfer of micro-patterns in VLSI production from photolithographic templates to silicon wafers. [0003] During the etching process, etching gas (mainly F-based and Cl-based ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C4/10B22F1/00C23C4/134
Inventor 王文东夏洋李楠
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI