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Coloring methods and mixed solutions for n-well and deep-n-well

A technology of mixing solution and semiconductor, applied in the field of semiconductor analysis, can solve problems such as difficulty in applying semiconductor devices, and achieve the effect of good coloring effect

Active Publication Date: 2017-08-11
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the existing mixed solutions and coloring methods are difficult to apply to semiconductor devices under the advanced process technology with CD less than 90nm

Method used

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  • Coloring methods and mixed solutions for n-well and deep-n-well
  • Coloring methods and mixed solutions for n-well and deep-n-well
  • Coloring methods and mixed solutions for n-well and deep-n-well

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Embodiment Construction

[0033] In order to make the purpose, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0034] The embodiment of the semiconductor structure using the coloring method of N well and deep N well of the present invention can refer to figure 1The structure shown includes: a substrate 1, a deep N well 2 formed in the substrate 1, an N well 41 located above the deep N well 2 in the substrate 1, and a gate 43 located above the substrate 1 , the source / drain region 42 located on both sides of the gate 43 and located in the substrate 1 , and the spacer 44 located on both sides of the gate 43 and located on the substrate 1 , wherein the material of the substrate 1 is silicon. This structure is a common PMOS structure in the art, and the CMOS also includes an NMOS that has the same structure as the PMOS, so details will not be described here.

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Abstract

The invention discloses a coloring method and a mixed solution for N wells and deep N wells in semiconductor devices. The present invention first etches the semiconductor structure before coloring the N well and the deep N well, so that the semiconductor structure becomes loose, so as to facilitate the coloring of the loose N well and deep N well regions by the mixed solution; in the coloring process A new mixed solution of deionized water, 70% concentration of nitric acid and 49% concentration of hydrofluoric acid is used in the volume ratio of 20:50:1, which makes the coloring rate of N well and deep N well controllable, and can reach Great coloring effect. The invention solves the problem that it is difficult to color N wells and deep N wells in semiconductor devices with less than 90nm process technology when performing FA analysis.

Description

technical field [0001] The invention relates to semiconductor analysis technology, in particular to a method for coloring N wells and deep N wells and a mixed solution for coloring N wells and deep N wells during failure analysis. Background technique [0002] Coloring (stain) is a common method used in FA (Failure Analysis) to detect doping profiles or structural profiles. For example, for SEM (Scanning Electron Microscope, scanning electron microscope) cross section CA (Construction Analysis, structural analysis) analysis of semiconductor devices requires HF (hydrofluoric acid) coloring, GOX (Gate Oxide, gate oxide layer) detection requires polysilicon Etching solution (Poly acid) coloring, NMOS (N-Metal-Oxide-Semiconductor, N-type Metal-Oxide-Semiconductor, N-type Metal-Oxide-Semiconductor, N-type Metal-Oxide-Semiconductor), source / drain region doping detection requires N-type doped etching solution coloring, etc. [0003] However, in FA, it is a difficult task to detect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/66
Inventor 殷原梓高保林杨梅文智慧张菲菲
Owner SEMICON MFG INT (SHANGHAI) CORP