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Array substrate, display device and method for manufacturing array substrate

A technology for array substrates and display areas, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc., can solve problems such as VDD voltage differences, large voltage drops, organic light-emitting diode D1 drive voltage differences, etc. , to achieve the effect of reducing the difference of driving voltage, reducing voltage drop, and eliminating uneven brightness

Active Publication Date: 2017-12-26
WUHAN TIANMA MICRO ELECTRONICS CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the current design, all pixels are connected together through the peripheral and internal VDD lines of the display area, but as the resolution increases, each pixel unit becomes smaller and smaller, so when the VDD lines become very thin And a very long time will cause a relatively large voltage drop, resulting in differences in the voltage of VDD of different pixel units, resulting in differences in the driving voltage of the organic light-emitting diode D1, which may lead to uneven display brightness of the panel in severe cases

Method used

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  • Array substrate, display device and method for manufacturing array substrate
  • Array substrate, display device and method for manufacturing array substrate
  • Array substrate, display device and method for manufacturing array substrate

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Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0020] figure 2 Shown is a cross-sectional view of an array substrate 10 provided in an embodiment of the present invention in a display area.

[0021] Such as figure 2 As shown, an isolation layer 102 is disposed on the base substrate 101, and a thin film transistor layer is disposed on the isolation layer 102. The thin film transistor layer includes a semiconductor layer 103 disposed on the isolation layer 102 in sequence, a gate disposed on the semiconductor ...

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Abstract

The invention discloses an array substrate and its manufacturing process. The array substrate includes: a base substrate, which is divided into a display area and a non-display area; a thin film transistor layer, located on the base substrate; the thin film transistor layer in the display area is included on the base substrate in sequence A first auxiliary layer and a source-drain metal layer are provided, and the source-drain metal layer is electrically connected to the first auxiliary layer. By adopting the array substrate of the present invention, the voltage drop on the VDD line can be reduced, the difference of the driving voltage on the organic light-emitting diode can be reduced, and the purpose of eliminating uneven display brightness of the panel can be achieved.

Description

technical field [0001] The invention relates to flat panel display technology, and in particular to an organic light emitting diode array substrate, a display device and a manufacturing method of the array substrate. Background technique [0002] There are two driving methods of an organic light-emitting display (Organic Light-Emitting Diode, OLED) which are passive matrix (Passive Matrix, PM) and active matrix (Active Matrix, AM). Compared with the passive matrix drive, the active matrix drive has the advantages of large display information, low power consumption, long device life, and high screen contrast. Such as figure 1 As shown, an equivalent circuit of a pixel unit of an active matrix organic light emitting display in the prior art includes: a switching transistor M1, a driving transistor M2, a storage capacitor C1, and an organic light emitting diode D1. Wherein, the switch tube M1 is turned on when the gate is gated by the scan signal Vscan(n), and the data signal...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/84H01L23/50H01L27/32
Inventor 李松罗丽媛钱栋刘刚
Owner WUHAN TIANMA MICRO ELECTRONICS CO LTD