Excimer laser annealing device

Abstract

The invention provides an excimer laser annealing device which comprises a process cavity, a pulse lengthening module and a laser device. The laser device is used for emitting a laser beam. The pulse lengthening module is used for prolonging the pulse time of the laser beam and outputting lengthened pulse laser to a base plate arranged in a reaction cavity. The pulse lengthening module comprises at least two pulse lengthening deflection lens groups and a driving device, wherein each pulse lengthening deflection lens group includes four pulse lengthening deflection lenses, and the pulse lengthening deflection lens groups are different in pulse lengthening time, and the driving device is used for driving the pulse lengthening deflection lens groups to move to the positions passed by light paths or the positions deviating from the light paths. The excimer laser annealing device can select appropriate pulse lengthening time according to the specific conditions, accordingly can ensure that laser pulse time and laser working energy both meet the requirements and further can improve the production stability and yield of polycrystalline silicon films.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an excimer laser annealing device. Background technique [0002] AMOLED (Active-matrix organic light emitting diode, active-matrix organic light-emitting diode) has become the future display technology due to its advantages of high image quality, short response time of moving images, low power consumption, wide viewing angle and ultra-light and ultra-thin. Best choice. At present, in the backplane technology of AMOLED, the manufacturing methods of polysilicon thin film mainly include: excimer laser annealing (ELA), solid phase crystallization (SPC), metal induced crystallization (MIC) and so on. Among them, using the excimer laser annealing (ELA) process to make the polysilicon thin film of the active layer of the transistor in the backplane is the only method that has achieved mass production. [0003] The excimer laser annealing device is a device that uses an excime...

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Problems solved by technology

[0005] In the actual production of polysilicon thin films, only one pulse extension time often cannot meet different requirements, and the laser pulse time is prone to be too short or too long. If the laser pulse time is too short, it is not conducive to the crystallization process of polysilicon, thus affecting the polysilicon film. The quality of the laser; if the laser pulse time is too long, the laser working energy will be reduced, which will affect the production stability and yield of the polysilicon film

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