Vertical-structure LED chip and manufacturing method thereof

Abstract

The invention discloses a manufacturing method of a vertical-structure LED chip. The manufacturing method comprises the steps that a front end structure is provided, wherein the front end structure comprises a sapphire substrate, a doped gallium nitride layer, an N-type gallium nitride layer, a gallium nitride layer and a P-type gallium nitride layer, and the doped gallium nitride layer, the N-type gallium nitride layer, the gallium nitride layer and the P-type gallium nitride layer are sequentially formed on the sapphire substrate; a function layer is formed on the P-type gallium nitride layer, a bonding substrate is bonded with the function layer, and the sapphire substrate is removed; the doped gallium nitride layer is etched, and the N-type gallium nitride layer is exposed; surface roughening processing is carried out on the exposed N-type gallium nitride layer; an aluminum oxide layer is formed as a protective layer. The invention further discloses the vertical-structure LED chip obtained through the method. According to the vertical-structure LED chip and the manufacturing method thereof, the light emitting rate can be improved, the better light emitting angle is obtained, and the light emitting efficiency and reliability of the vertical-structure LED chip are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a vertical structure LED chip and a manufacturing method thereof. Background technique [0002] For traditional front-mounted LED chips, P-type GaN is difficult to dope, resulting in low hole carrier concentration and difficulty in growing thick, resulting in difficult diffusion of current. At present, the method of preparing ultra-thin metal film or ITO film on the surface of P-type GaN is generally used to achieve The current has to spread evenly. However, the metal thin film electrode layer has to absorb part of the light to reduce the light extraction efficiency, and if the thickness is reduced, it will in turn limit the current diffusion layer to achieve uniform and reliable current diffusion on the surface of the P-type GaN layer. Although the light transmittance of ITO is as high as 90%, the electrical conductivity is not as good as that of metal, and the diffusion...

AI Technical Summary

Problems solved by technology

However, the sidewall coverage of the SiO2 passivation layer deposited by PECVD is poor, so the protective layer on the roughened surface of the vertical structure needs to be optimized.

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