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Magnetic sensor and preparation technology thereof

A preparation process and magnetic sensing technology, applied in the manufacture/processing of electromagnetic devices, measuring devices, measuring magnetic variables, etc., can solve the problems of long preparation cycle, long process flow and high preparation cost

Active Publication Date: 2015-07-22
QST CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the magnetic sensor continues to be manufactured on the ASIC, there will be a total of 7-11 layers; it can be seen that the process of preparing a single-chip magnetic sensor using the existing device architecture is relatively long, which leads to a longer preparation cycle and higher preparation costs. high

Method used

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  • Magnetic sensor and preparation technology thereof
  • Magnetic sensor and preparation technology thereof
  • Magnetic sensor and preparation technology thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0104] The invention discloses a magnetic sensing device, which includes a peripheral circuit and a magnetic sensing component, wherein one or more metal layers are used not only to realize the function of the peripheral circuit, but also to realize the magnetic The function of the sensing part. The peripheral circuit includes a multi-layer metal layer; one or more metal layers in the peripheral circuit are used to realize the self-detection or / and SET / RESET or / and electrical connection function of the magnetic sensing device, or As an electrode metal for magnetic sensing devices.

[0105] In this embodiment, the magnetic sensing device is a two-axis magnetic sensing device; the magnetic sensing device includes multiple layers of metal layers, magnetic material layers, and electrode layers. One or more layers of the multi-layer metal layer belong to a part of the peripheral circuit, and realize the self-detection or / and SET / RESET or / and electrical connection function of the m...

Embodiment 2

[0122] The difference between this embodiment and Embodiment 1 is that in this embodiment, the magnetic sensing device is a three-axis magnetic sensing device; the three-axis magnetic sensing device includes a horizontal direction magnetic sensor (for its structure, please refer to the embodiment The description of one will not be repeated here), vertical magnetic sensor.

[0123] see Figure 26 , the vertical direction magnetic sensor includes a substrate containing a peripheral circuit, the peripheral circuit is arranged on one side of the substrate 201, including a first metal layer 203, a second metal layer 204, a first metal layer 203, a second metal layer 204 separated by the first insulating dielectric layer 202 of the substrate 201 .

[0124] A second insulating medium layer 205 is laid on the first insulating medium layer 202, and a groove 206 is formed on the surface of the second insulating medium layer 205; the vertical direction magnetic sensor further includes a...

Embodiment 3

[0142] The difference between this embodiment and Embodiment 1 is that the two metal layers of the ASIC circuit are used as the self-detection of the magnetic sensor and the metal layer of SET / RESET respectively, which can reduce the metal layers of the two-layer magnetic sensor manufacturing, that is, only need to add one The metal of the first layer can realize the function of the chip.

[0143] see Figure 27 , in this embodiment, the magnetic sensing device is a two-axis magnetic sensing device; the peripheral circuit is arranged on one side of the substrate, including a first metal layer, a second metal layer, a first metal layer, a second metal layer The layers are separated by a first insulating dielectric layer of the substrate.

[0144] A second insulating medium layer is laid on the first insulating medium layer, and a magnetic material layer is arranged on the second insulating medium layer; the magnetic material layer includes two columns of magnetic material unit...

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Abstract

The invention discloses a magnetic sensor and a preparation technology thereof. The preparation technology comprises an insulated dielectric layer or / and a magnetic material layer or / and a metal layer is / are deposited on a substrate including a peripheral circuit, so that one or multiple metal layers of the peripheral circuit is / are used to realize self-detection or / and SET / RESET functions of the magnetic sensor, or serve as electrode metal of the magnetic sensor. According to the magnetic sensor and preparation technology thereof, one or multiple original metal layers of an ASIC can be used to realize functions of the metal layers of the magnetic sensor via device and circuit design and layout, the metal layers of the magnetic sensor are reduced from three to 2, and even to 0. The technical levels are greatly reduced, the technical period is shortened, the manufacture cost is reduced, and the competitive magnetic sensor with a single chip can be manufactured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor technology, and relates to a magnetic sensing device, in particular to a magnetic sensing device sharing a metal layer with an ASIC; meanwhile, the invention also relates to a preparation process of the magnetic sensing device. Background technique [0002] According to its principle, magnetic sensors can be divided into the following categories: Hall elements, magneto-sensitive diodes, anisotropic magnetoresistance elements (AMR), tunnel junction magnetoresistance (TMR) elements and giant magnetoresistance (GMR) elements, induction coils , superconducting quantum interference magnetometer, etc. [0003] Electronic compass is one of the important application fields of magnetic sensors. With the rapid development of consumer electronics in recent years, in addition to navigation systems, more and more smart phones and tablet computers have also begun to be equipped with electronic compass as ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/09H01L43/12H10N50/01
Inventor 张挺
Owner QST CORP