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X-ray flat panel detector

A flat-panel detector, X-ray technology, applied in the field of flat-panel detection, can solve the problems of reducing the detection efficiency and sensitivity of the X-ray detector, reducing the output efficiency, etc., and achieve the effect of improving the quantum detection efficiency and sensitivity

Active Publication Date: 2015-07-22
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, due to the existence of defects such as dangling bonds in the amorphous component of the amorphous silicon material, the charges will be trapped by the defects when they are collected, thereby reducing the output efficiency and reducing the detection efficiency and sensitivity of the X-ray detector.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] figure 2 It is a schematic cross-sectional structure diagram of the X-ray flat panel detector according to the first embodiment of the present invention. Such as figure 2As shown, in the first embodiment, the X-ray flat panel detector includes a substrate 1 with a general structure, a thin film transistor 2 disposed on the substrate, a pixel electrode layer 3, a photodiode 4, a transparent electrode layer 5 and In addition to the X-ray conversion layer 6, it also includes a positive electrode layer 110 and a negative electrode layer 120, wherein the negative electrode layer 120 is made of a light-transmitting material, and is arranged between the transparent electrode layer 5 and the X-ray conversion layer 6, the transparent electrode layer 5 and the X-ray conversion layer 6 A light-transmitting insulating layer 130 is also arranged between the negative electrode layers 120, and the insulation between the transparent electrode layer 5 and the X-ray conversion layer 6...

Embodiment 2

[0051] Figure 4 It is a schematic cross-sectional structure diagram of the X-ray flat panel detector according to the second embodiment of the present invention. Such as Figure 4 As shown, in the second embodiment, the X-ray flat panel detector includes a substrate 1 with a general structure, a thin film transistor 2 disposed on the substrate 1, a pixel electrode layer 3, a photodiode 4, and a transparent electrode layer 5 In addition to the X-ray conversion layer 6, it also includes a positive electrode layer 210 and a negative electrode layer 220, and the negative electrode layer 220 is made of a transparent material. Specifically, the transparent electrode layer 5 and the negative electrode layer 220 are arranged in the same layer and material and are insulated from each other, and the positive electrode layer 210 and the gate 22 of the thin film transistor 2 are arranged in the same layer and made of the same material.

[0052] Preferably, the electrodes of the transpa...

Embodiment 3

[0067] Figure 7 It is a schematic cross-sectional structure diagram of the X-ray flat panel detector according to the third embodiment of the present invention. Such as Figure 7 As shown, in the third embodiment, in the third embodiment, the X-ray flat panel detector includes a substrate 1 with a general structure, a thin film transistor 2 disposed on the substrate 1, a pixel electrode layer 3, a photoelectric In addition to the diode 4, the transparent electrode layer 5 and the X-ray conversion layer 6, it also includes a positive electrode layer 310 and a negative electrode layer 320, and the negative electrode layer 320 is made of a transparent material. Specifically, the transparent electrode layer 5 and the negative electrode layer 320 are in the same layer and material and are insulated from each other, and the positive electrode layer 310 and the pixel electrode layer 3 are in the same layer and material and are insulated from each other.

[0068] In addition, prefe...

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Abstract

The invention provides an X-ray flat panel detector. The X-ray flat panel detector comprises a substrate as well as a thin film transistor, a pixel electrode layer, a photodiode, a transparent electrode layer and an X-ray conversion layer which are arranged on the substrate, wherein the X-ray flat panel detector also comprises an electric field applying structure used for forming an electric field, the photodiode is located in the electric field, and the direction of the electric field is the same with the moving direction of negative charge when the photodiode converts visual light into an electric signal. The X-ray flat panel detector has the advantages that the electric field the direction of which is same with the moving direction of the negative charge of the photodiode is applied, so that movement of electrons and holes of the photodiode are accelerated under the action of the electric field, an electric signal can rapidly reach the pixel electrode, and thus the quantum detection efficiency and sensitivity of the X-ray flat panel detector can be improved.

Description

technical field [0001] The invention relates to the technical field of flat panel detection, in particular to an X-ray flat panel detector. Background technique [0002] X-ray inspection is widely used in medical, safety, non-destructive testing, scientific research and other fields. At present, the more common X-ray inspection technology is X-ray digital photography (Digital Radiography, DR) inspection technology that appeared in the late 1990s. The flat panel detector is used in the X-ray digital photography system, and its pixel size can be smaller than 0.1mm, so its imaging quality and resolution are almost comparable to those of film photography, and it also overcomes the limitations of film photography. It also provides convenience for computer processing of images. [0003] According to different electronic conversion modes, digital X-ray flat panel detectors can be divided into two types: direct conversion type (Direct DR) and indirect conversion type (Indirect DR)....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14663H01L27/14612G01T1/20184G01T1/241
Inventor 高锦成曹占锋孔祥春姚琪李正亮张斌何晓龙
Owner BOE TECH GRP CO LTD
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