Photoconductive ultraviolet detector and manufacturing method thereof

A technology of an ultraviolet detector and a manufacturing method, which is applied in the field of optoelectronics, can solve the problems of a small effective light-receiving area of ​​an ultraviolet-sensitive film, and achieve the effects of increasing the effective light-receiving area and improving device performance.

Active Publication Date: 2015-07-29
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a photoconductive ultraviolet detector and its manufacturing method, which is used to solve the problem that the effective light-receiving area of ​​the ultraviolet-sensitive film in the prior art is small

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  • Photoconductive ultraviolet detector and manufacturing method thereof
  • Photoconductive ultraviolet detector and manufacturing method thereof
  • Photoconductive ultraviolet detector and manufacturing method thereof

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Embodiment Construction

[0030] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0031] Please see attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a photoconductive ultraviolet detector and a manufacturing method thereof. The photoconductive ultraviolet detector is composed of an insulating substrate, an ultraviolet sensitive film, metal electrodes and graphene transparent interdigitated electrodes sequentially from bottom to top. The insulating substrate can be a quartz glass sheet or a silicon wafer, wherein an insulating medium such as silicon oxide or silicon nitride is grown or deposited on the surface of the silicon wafer. The ultraviolet sensitive film is made of a film material chosen from gallium nitride, aluminum-doped gallium nitride, zinc oxide, magnesium-doped zinc oxide, silicon carbide and diamond. The strip-shaped metal electrodes are made of gold or platinum. The graphene transparent interdigitated electrodes cover the ultraviolet sensitive film and the metal electrodes. By adopting the graphene transparent interdigitated electrodes instead of metal interdigitated electrodes, the ultraviolet radiation transmittance of the detector is high, and the performance of the device is improved.

Description

technical field [0001] The invention belongs to the field of optoelectronics, in particular to a photoconductive ultraviolet detector and a manufacturing method thereof. Background technique [0002] The current research and development focus of ultraviolet detectors is to develop devices that can work in the solar blind zone (cutoff wavelength less than 280nm) based on wide-bandgap semiconductor materials. At present, the wide bandgap semiconductor materials commonly used in the preparation of ultraviolet sensitive thin films mainly include gallium nitride (GaN), zinc oxide (ZnO), silicon carbide (SiC) and diamond (Diamond). GaN material can be doped with Al, so that its cut-off wavelength can be continuously changed in the range of 200nm-365nm. This kind of detector has been commercialized at present, but the main problem faced by this kind of device is the high aluminum composition Al x Ga 1-x N materials are difficult to prepare. The advantage of ZnO material is that ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/0224H01L31/022408H01L31/101H01L31/18
Inventor 冯飞王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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