Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electrostatic protection circuit

An electrostatic protection and circuit technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of protection ability influence, lack of IOpad current path, etc.

Active Publication Date: 2015-08-19
WUHAN XINXIN SEMICON MFG CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this method lacks the current path from IO pad to VDD, and its ESD (Electronic Static Discharge, electrostatic discharge) protection ability will be greatly affected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic protection circuit
  • Electrostatic protection circuit
  • Electrostatic protection circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Specifically, such as image 3As shown, an electrostatic protection circuit mainly includes various components, specifically transistor M1, transistor M2, transistor M3, transistor M4, diode D5, diode D6, power supply voltage VDD, power supply voltage VSS, VDD bus (Dummy VDD), I / O input terminal (Innput Pad), I / O output terminal (Output Pad), power clamp module (Power Clamp), ESD module (Local ESD Clamp) and drive module (including logic circuit unit (Logic Circuits ) and a pre-driver unit (Pre-driver)), and the drive module has an input port (that is, a port connected to the I / O input terminal), a first drive port (that is, a port connected to the gate of the transistor M3), a second A driving port (that is, a port connected to the gate of transistor M4 ) and two return ports (ports connected to power supply voltages VDD and VSS ). The driving module realizes the on-off control of the transistor M3 or the transistor M4 through the first driving port and the second dri...

Embodiment 2

[0061] The embodiment one is image 3 The circuit in is modified to form Figure 4 the circuit described.

[0062] Specifically, in Embodiment 1, the drain of transistor M3 is changed from being connected to the power supply voltage VDD to connecting the drain of transistor M3 to the VDD bus, and the electrostatic protection circuit further includes a transistor M5; wherein, the gate of transistor M5 is connected to the power supply voltage VDD is connected, the source of transistor M5 is connected to the gate of transistor M3, and the drain of transistor M5 is connected to the VDD bus.

[0063] In the embodiment of the present invention, the transistor M5 is a PMOS transistor, and the drive module can be divided into various drive units according to needs, such as Figure 4 As shown, the driving module is a logic circuit and a pre-stage driving circuit, and the pre-stage driving circuit is connected to the power supply voltage VDD through the diode D6.

[0064] In the embo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to the technical field of circuit design and particularly relates to an electrostatic protection circuit applied to a three-dimensional integrated circuit (3D IC). The circuit is optimized mainly by means of a VDD bus, a diode D5 and a diode D6. That is, the ESD protection circuit is effectively isolated from an original VDD. In this way, in the power-down mode or in the multi-voltage application condition wherein all groups of voltages are different from one another, the formation of a leakage current path is effectively avoided, and the discharge property of the ESD current path is improved. Furthermore, the yield of 3D IC products during the manufacturing process is effectively improved.

Description

technical field [0001] The invention relates to the technical field of circuit design, in particular to an electrostatic protection circuit applied to 3D ICs. Background technique [0002] With the continuous maturity and development of 3D IC (that is, a three-dimensional integrated circuit formed by several layers of stacked and connected circuit layouts), more and more subsystem chips are integrated into a large system, thereby realizing system-in-chip (system in a chip, such as a SiC chip). As the application requirements of system-on-chip continue to increase, low power consumption has become a very common and important link in many product requirements. In practical application, some circuits and modules in the system are often put in a power-down mode, and only start up when needed, so as to reduce power consumption. [0003] In power-down mode, figure 1 The traditional structure in 3D IC often encounters problems, for example: there are signal connections between d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/02
Inventor 单毅
Owner WUHAN XINXIN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com