Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film

A low-emissivity and selective technology, applied in the field of infrared stealth films and their preparation, can solve problems such as low emissivity, and achieve the effects of strong bonding force, small residual thermal stress, and good thermal matching.

Active Publication Date: 2015-08-26
NAT UNIV OF DEFENSE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is still relatively rare to conduct research on the control of spectral emission radiation in the infrared ba

Method used

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  • Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film
  • Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film

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Embodiment 1

[0033] a kind of like figure 1 The infrared stealth film with spectral selectivity and low emissivity shown in the present invention is a film that can regulate the emitted radiation of the spectrum. The infrared stealth film is a multilayer superimposed structure, and the multilayer superimposed structure contains There is a periodic laminated structure consisting of layers of high-refractive-index materials and layers of low-refractive-index materials alternately stacked, and the substrate is Si. The thickness of each film layer in the multilayer superposition structure is irregularly distributed between 100nm and 900nm, and the optical thickness of each layer in the multilayer superposition structure is close to λ / 4, where λ refers to any wavelength in the infrared window band. It is generally preferred to connect each film layer by chemical bonding.

[0034] In the infrared stealth film with spectral selectivity and low emissivity of the present embodiment, the high refra...

Embodiment 2

[0043] An infrared stealth film with spectral selectivity and low emissivity of the present invention, the infrared stealth film is a film that can regulate the emitted radiation of the spectrum, the infrared stealth film is a multi-layer superposition structure, and the multi-layer superposition structure contains There is a periodic laminated structure consisting of layers of high-refractive-index materials and layers of low-refractive-index materials alternately stacked, and the substrate is Si. The thickness of each film layer in the multilayer superposition structure is irregularly distributed between 100nm and 900nm, and the optical thickness of each layer in the multilayer superposition structure is close to λ / 4; λ refers to any wavelength in the infrared window band. It is generally preferred to connect each film layer by chemical bonding.

[0044] In the infrared stealth film with spectral selectivity and low emissivity of the present embodiment, the high refractive i...

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Abstract

The invention relates to an infrared stealth thin film with spectral selectivity and low emission rate. The infrared stealth thin film is of a multi-layer superimposed structure; the multi-layer superimposed structure contains a periodically-laminated structure which is formed by alternately superimposing high-refractive index material layers and low-refractive index material layers; the thicknesses of the film layers in the multi-layer superimposed structure are randomly distributed between 100 and 900nm; and the optical thicknesses of a certain number of film layers in the multi-layer superimposed structure are approximate to lambda/4, wherein lambda is an arbitrarily wavelength in infrared window bands. The preparation method of the thin film includes the following steps that: a substrate is cleaned; a Ge thin film is plated on the substrate by means of sputtering and through adopting a radio frequency magnetron sputtering method; and a MgF2 thin film is plated on the high-refractive index material layer by means of sputtering and through adopting a radio frequency magnetron sputtering method; the previous steps are repeated for a plurality of periods, and alternate control on designed thicknesses is utilized in combination, and therefore, the infrared stealth thin film with spectral selectivity and low emission rate can be obtained. The preparation method of the infrared stealth thin film of the invention has the advantages of simple preparation process, high repeatability, low equipment requirements, excellent product performance and favorable application effect.

Description

technical field [0001] The invention belongs to the technical field of functional thin film materials, and in particular relates to an infrared stealth thin film with spectral selectivity and low emission performance and a preparation method thereof. Background technique [0002] With the continuous development of stealth technology, infrared stealth, as one of the important means, has received more and more attention. The concept of infrared stealth refers to eliminating or reducing the difference in the radiation characteristics of the two atmospheric windows (3.0μm~5.0μm, 8.0μm~14.0μm) in the middle and far infrared bands between the target and the background. [0003] At present, in infrared stealth technology, there are two commonly used means: changing the infrared radiation band of the target or reducing its infrared radiation output, and the latter is the most common technical means. [0004] By the Stefan-Boltzmann law: M=εσT 4 , the degree of infrared radiation e...

Claims

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Application Information

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IPC IPC(8): G02B1/10B32B19/00C23C14/35
CPCB32B19/00C23C14/35G02B1/10
Inventor 程海峰李俊生彭亮郑文伟张朝阳周永江刘海韬
Owner NAT UNIV OF DEFENSE TECH
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