Preparation method of rare earth element Sm-doped GaN nano wire

A technology of rare earth elements and nanowires, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of high cost and complicated preparation process, and achieve low environmental pollution, simple process, and easy The effect of control

Inactive Publication Date: 2015-09-09
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing Sm-doped GaN nanowires with room temperature ferromagnetism by chemical vapor deposition to solve the problems of complex preparation process and high cost in the prior art

Method used

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  • Preparation method of rare earth element Sm-doped GaN nano wire
  • Preparation method of rare earth element Sm-doped GaN nano wire
  • Preparation method of rare earth element Sm-doped GaN nano wire

Examples

Experimental program
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Effect test

Embodiment 1

[0015] Rare earth element Sm doped GaN nanowires were prepared. The system used consists of a horizontal tube furnace heated by silicon-molybdenum rods, a gas system and a vacuum system. Using high-purity Ga 2 o 3 Powder and NH 3 Gas is used as Ga source and N source respectively, and high-purity Sm 2 o 3 The powder was used as the Sm source. Weigh 0.3 g of Ga 2 o 3 . Place it in the middle of the horizontal tube furnace, and place the Si substrate 20-25 cm downstream of the central temperature zone to seal the horizontal tube furnace. Start the mechanical pump and molecular pump to evacuate the system, and evacuate the vacuum in the furnace to 1×10 -3 Pa, the purpose is to remove the residual water vapor and oxygen in the system. Ar gas was introduced, and the tube furnace was heated. The tube furnace was heated under the protection of Ar gas, and when the temperature reached 1100 °C, the Ar gas was replaced with 150 sccm NH 3 Air and keep warm for 2 h. Then the...

Embodiment 2

[0017] Rare earth element Sm doped GaN nanowires were prepared. The system used consists of a horizontal tube furnace heated by silicon-molybdenum rods, a gas system and a vacuum system. Using high-purity Ga 2 o 3 Powder and NH 3 Gas is used as Ga source and N source respectively, and high-purity Sm 2 o 3 The powder was used as the Sm source. Weigh 0.3000 g of Ga 2 o 3 and 0.0296 g Sm 2 o 3 Powder, placed in an agate mortar and mixed thoroughly. Put the uniformly mixed powder into a ceramic boat, and place it in the middle of the horizontal tube furnace. At the same time, place a Si substrate at a position 20-20 cm downstream of the central temperature zone, and seal the horizontal tube furnace. furnace. Start the mechanical pump and molecular pump to evacuate the system, and evacuate the vacuum in the furnace to 1×10 -3 Pa, the purpose is to remove the residual water vapor and oxygen in the system. Ar gas was introduced, and the tube furnace was heated. The tub...

Embodiment 3

[0019] Rare earth element Sm doped GaN nanowires were prepared. The system used consists of a horizontal tube furnace heated by silicon-molybdenum rods, a gas system and a vacuum system. Using high-purity Ga 2 o 3 Powder and NH 3 Gas is used as Ga source and N source respectively, and high-purity Sm 2 o 3 The powder was used as the Sm source. Weigh 0.3000 g of Ga 2 o 3 and 0.0620 g Sm 2 o 3 Powder, placed in an agate mortar and mixed thoroughly. Put the uniformly mixed powder into a ceramic boat, and place it in the middle of the horizontal tube furnace. At the same time, place a Si substrate at a position 20-20 cm downstream of the central temperature zone, and seal the horizontal tube furnace. furnace. Start the mechanical pump and molecular pump to evacuate the system, and evacuate the vacuum in the furnace to 1×10 -3 Pa, the purpose is to remove the residual water vapor and oxygen in the system. Ar gas was introduced, and the tube furnace was heated. The tub...

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Abstract

The invention discloses a preparation method of a rare earth element Sm-doped GaN nano wire. According to the invention, a chemical vapor deposition method is used for preparing the rare earth element Sm-doped GaN nano wire, the reaction system mainly comprises a vacuum system, an air passage system and a horizontal tubular furnace; high purity Ga2O3 powder, high purity Sm2O3, and NH3 can be respectively taken as a Ga source, a Sm source and a N source, Ga2O3 and Sm2O3 powder with certain proportion can be weighed, are uniformly ground and mixed, then placed in a ceramic boat, and placed at center of a furnace tube, a Si substrate is placed at a downstream low temperature zone and sealed, pressure intensity of the system is pumped to 1*10<-3>Pa, Ar is introduced, and heated to 1100 DEG C, NH3 is introduced, insulated for 2 hours, NH3 is conversed to Ar, cooled to room temperature, and the Si substrate is removed and sealed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanometer materials and their preparation, relates to the preparation of semiconductor materials and the study of room temperature ferromagnetism, and mainly focuses on the preparation of room temperature ferromagnetic Sm-doped GaN powder. Background technique [0002] GaN-based materials are typical representatives of the third-generation wide-bandgap semiconductors, with a bandgap width of 3.39 eV, and near-band-edge luminescent positions within the visible light range, so they have a wide range of value in the industrial field. GaN-based materials are one of the ideal materials for preparing various optoelectronic devices, such as light-emitting diodes (LEDs), ultraviolet detectors, laser diodes (LDs) and other high-frequency and high-temperature electronic devices [0003] At present, the research on rare earth element Sm-doped GaN nanomaterials mainly focuses on the synthesis of GaN thi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C01B21/06B82Y30/00B82Y40/00
Inventor 简基康程章勇
Owner XINJIANG UNIVERSITY
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