A semi-floating gate memory structure and manufacturing method thereof

Abstract

The invention discloses a semi-floating gate memory structure and a manufacturing method thereof. A gate dielectric layer located on a semiconductor substrate; a floating gate contact area located in the gate dielectric layer; and a gate dielectric layer located on the gate dielectric layer. A semi-floating gate, the semi-floating gate includes a first semi-floating gate and a second semi-floating gate; an isolation dielectric layer located on the surface and side of the semi-floating gate; a control gate located on the second half-floating gate; first spacers located on both sides of the control gate; second spacers located on both sides of the isolation dielectric layer that is not covered with the control gate; wherein the second half-floating gate completely covers the Floating gate contact area, the control gate wraps the second half floating gate. The semi-floating gate memory structure and implementation method prepared according to the present invention will improve the reading and writing speed of the memory. The structure of the semi-floating gate memory is simple, and it is helpful to realize the function of the semi-floating gate memory in the MOSFET transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semi-floating gate memory structure and an implementation method. Background technique [0002] Semiconductor memories are widely used in various electronic products. Different application areas place different requirements on the structure, performance and density of semiconductor memories. For example, static random access memory (SRAM) has high random access speed and low integration density, while standard dynamic random access memory (DRAM) has high density and medium random access speed. [0003] Metal-oxide-semiconductor field-effect transistors (MOSFETs) and floating-gate transistors are the most basic devices in integrated circuits today. With the advancement of semiconductor device manufacturing technology, the size of transistors has been shrinking, and their power density has been increasing. The shrinking size of semiconductor devices will in...

AI Technical Summary

Problems solved by technology

However, when semi-floating gate transistors manufactured according to the prior art are applied to low-voltage ultrafast memory (Low-voltage Ultrafast Memory) and sensors (Sensing Operation), the reading speed of semi-floating gate memory is slow, which will affect the performance of semiconductor devices

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