A strained film structure on an insulator and a method for adjusting the stress of the strained film
A strained film and insulator technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as high cost, limited introduced stress, dislocation, etc., and achieve the effect of increasing stress
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Embodiment 1
[0035] The invention provides a method for adjusting the stress of a strained film on an insulator, which at least includes the following steps:
[0036] Step S1: providing a semiconductor structure including a top-layer strained semiconductor layer, a buried oxide layer, and a semiconductor substrate from top to bottom, and etching the top-layer strained semiconductor layer to form a predetermined pattern microstructure therein; the microstructure includes a main body and four bridge lines distributed on the edge of said main body;
[0037] Step S2: Etching away the buried oxide layer under the microstructure to release the microstructure, so that the main body relaxes and a force is generated on the bridge wire towards the center.
[0038] See first figure 1 and figure 2 , performing step S1: providing a semiconductor structure including the top strained semiconductor layer 3, the buried oxide layer 2 and the semiconductor substrate 1 sequentially from top to bottom, fig...
Embodiment 2
[0046] In this embodiment, on the basis of the first embodiment, stress regulation is further performed on the top strained semiconductor layer.
[0047] see Figure 1 to Figure 3 1. Firstly, step S1 and step S2 that are basically the same as those in Embodiment 1 are executed. Please refer to Embodiment 1 for the specific operation process, which will not be repeated here.
[0048] see again Figure 4 , execute step S3: the step of cutting off two opposite bridge wires, so as to increase the stress of the other two bridge wires.
[0049] Specifically, a focused ion beam machine is used to cut off two opposite bridge lines, and the two opposite bridge lines are located in the same direction. After the two opposite bridge wires are cut off, the central region of the microstructure, that is, the main body 4 relaxes stronger, and the two ends of the bridge wire 5 are stretched more obviously, so that the stress in the bridge wire 5 increases. Figure 4 It shows a schematic dia...
Embodiment 3
[0052] see image 3 The present invention also provides a strained thin film structure on an insulator, comprising at least a semiconductor substrate 1, a buried oxide layer formed on the semiconductor substrate, and a top strained semiconductor layer 3 formed on the buried oxide layer; A microstructure with a preset pattern is formed in the top strained semiconductor layer 3; the microstructure includes a main body 4 and at least two bridge lines 5 distributed on the edge of the main body 4; the buried oxide layer under the microstructure is hollowed out , the microstructure is in a suspended state; the bridge wire 5 is in a stretched state. image 3 Shown is a top view of the strained film-on-insulator structure.
[0053] Specifically, the semiconductor substrate 1 can be a conventional semiconductor such as Si, Ge, sapphire, etc., and the top strained semiconductor layer 3 can be a strained material layer such as strained Si, strained Ge, or strained SiGe, with a thickness...
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