Preparation method of perovskite type SrIrO3 single crystal film material

A technology of perovskite type, single crystal thin film, applied in the direction of polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the problem that single crystal materials cannot be tested, and achieve the effect of ensuring cleanliness

Inactive Publication Date: 2015-09-30
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0008] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of perovskite type SrIrO 3 Preparation method of single crystal thin film material, used to solve existing SrIrO 3 Problems that cannot be tested for single crystal materials

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  • Preparation method of perovskite type SrIrO3 single crystal film material
  • Preparation method of perovskite type SrIrO3 single crystal film material
  • Preparation method of perovskite type SrIrO3 single crystal film material

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Embodiment Construction

[0041] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0042] see Figure 1 to Figure 9 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a preparation method of a perovskite type SrIrO3 single crystal film material. The preparation method of the perovskite type SrIrO3 single crystal film material comprises the following steps: S1, providing a perovskite type substrate; S2, cleaning the perovskite type substrate; S3, annealing the perovskite type substrate; S4, adopting a Ir simple substance target evaporator source, a Sr simple substance target evaporator source and an oxygen source in an oxide molecular beam epitaxy system, and growing the perovskite type SrIrO3 single crystal film material at epitaxy of the surface of the perovskite type substrate. The preparation method of the perovskite type SrIrO3 single crystal film material is characterized in that an oxide molecular beam epitaxy technology is utilized, ultrahigh vacuum equipment hardware and a simple substance evaporator source are selected, an evaporator source beam flow is stably controlled, the substrate is selected and treated, and thin film synthesis parameters are stably controlled, so that a high-quality perovskite type SrIrO3 single crystal film material is prepared. Compared with a bulk material, the single crystal film material has great advantages and is of a stable-state perovskite type structure, an epitaxial film surface is a natural smooth cleavage surface, testing of an electronic structure can be facilitated, and testing can be carried out more smoothly due to high cleanliness of sample surface.

Description

technical field [0001] The invention belongs to the field of material synthesis and relates to a perovskite type SrIrO 3 Preparation method of single crystal thin film material. Background technique [0002] Transition metal oxides (TMOs), especially transition metal oxide materials containing 3d orbital electrons, have been widely concerned by researchers, because many important physical phenomena have been discovered in such materials, such as: high-temperature superconductivity, ferroelectricity , Colossal magnetoresistance, Mott insulating state, topological insulating state, two-dimensional electron gas and so on. For the 4d and 5d electron systems, due to the increase of the d electron orbital, this type of material has a relatively small electron correlation effect, and the previous theory predicts that this type of material should have better metal conductivity. However, recent studies have found that they exhibit abnormal physical behavior, especially the quasi-tw...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/24C30B25/02
Inventor 刘正太沈大伟李明颖杨海峰姚岐刘吉山樊聪聪
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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