Preparation method of perovskite type SrIrO3 single crystal film material

Abstract

The invention provides a preparation method of a perovskite type SrIrO3 single crystal film material. The preparation method of the perovskite type SrIrO3 single crystal film material comprises the following steps: S1, providing a perovskite type substrate; S2, cleaning the perovskite type substrate; S3, annealing the perovskite type substrate; S4, adopting a Ir simple substance target evaporator source, a Sr simple substance target evaporator source and an oxygen source in an oxide molecular beam epitaxy system, and growing the perovskite type SrIrO3 single crystal film material at epitaxy of the surface of the perovskite type substrate. The preparation method of the perovskite type SrIrO3 single crystal film material is characterized in that an oxide molecular beam epitaxy technology is utilized, ultrahigh vacuum equipment hardware and a simple substance evaporator source are selected, an evaporator source beam flow is stably controlled, the substrate is selected and treated, and thin film synthesis parameters are stably controlled, so that a high-quality perovskite type SrIrO3 single crystal film material is prepared. Compared with a bulk material, the single crystal film material has great advantages and is of a stable-state perovskite type structure, an epitaxial film surface is a natural smooth cleavage surface, testing of an electronic structure can be facilitated, and testing can be carried out more smoothly due to high cleanliness of sample surface.

Description

technical field [0001] The invention belongs to the field of material synthesis and relates to a perovskite type SrIrO 3 Preparation method of single crystal thin film material. Background technique [0002] Transition metal oxides (TMOs), especially transition metal oxide materials containing 3d orbital electrons, have been widely concerned by researchers, because many important physical phenomena have been discovered in such materials, such as: high-temperature superconductivity, ferroelectricity , Colossal magnetoresistance, Mott insulating state, topological insulating state, two-dimensional electron gas and so on. For the 4d and 5d electron systems, due to the increase of the d electron orbital, this type of material has a relatively small electron correlation effect, and the previous theory predicts that this type of material should have better metal conductivity. However, recent studies have found that they exhibit abnormal physical behavior, especially the quasi-tw...

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Problems solved by technology

[0008] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of perovskite type SrIrO 3 Preparation method of single crystal thin film material, used to solve existing SrIrO 3 Problems that cannot be tested for single crystal materials

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