An immersion liquid limiting mechanism
A technology of restricting mechanism and immersion, applied in the direction of photolithography process exposure device, microlithography exposure equipment, etc., can solve the problems of particle contamination, particle exposure printing defects, etc., to prevent influence, improve flow rate and uniformity, reduce The effect of pressure fluctuations
Active Publication Date: 2017-06-27
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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Problems solved by technology
However, for particle contamination, the problem that is still faced now is: due to the immersion liquid limiting mechanism 6 used to maintain the flow field of the immersion liquid 5, the internal pipeline material is in direct contact with ultrapure water and the inevitable introduction of particles during the exposure process of the silicon wafer 7, resulting in particles being exposed to print defects
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[0046] In order to make the above-mentioned purpose, features and advantages of the present invention clearer and easier to understand, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0047] Since the particles are exposed and printed defects are mainly affected by the update rate of the mainstream field and the stability and uniformity of the flow field, the particles in the fluid are usually affected by gravity, buoyancy, drag force, pressure and gradient force, virtual mass force, Basset force , Magnus force, Saffman force, thermophoretic force, etc. Such as Figure 4 As shown, the particle sedimentation velocity v at room temperature 20°C s and...
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Abstract
The invention relates to a liquid immersion limiting mechanism, comprising a first horizontal liquid supply channel, a first horizontal liquid outlet channel, a vertical liquid supply channel, a gas-liquid recovery channel and an air supply channel, a first horizontal liquid supply channel and a first horizontal outlet The liquid channels are arranged oppositely, the outlets of the vertical liquid supply channel, the gas-liquid recovery channel and the gas supply channel are arranged in sequence from the inside to the outside at the bottom of the immersion liquid limiting mechanism, and the first horizontal liquid supply channel and the vertical liquid supply channel are respectively connected to the liquid supply equipment , the first horizontal liquid outlet channel and the gas-liquid recovery channel are respectively connected to the gas-liquid recovery device, the gas supply channel is connected to the gas supply device, and the second horizontal liquid supply channel connected to the liquid supply device and the gas-liquid recovery device are also included. The second horizontal outlet channel. The invention improves the flow velocity and uniformity of the main flow field by adding a second horizontal liquid supply channel and a second horizontal liquid outlet channel, and constrains their position and size, and reduces the pressure fluctuation of the exposure field to prevent the pressure fluctuation from affecting the immersion. Effect of liquid focus depth and overlay.
Description
technical field [0001] The invention relates to the field of immersion photolithography machines, in particular to an immersion liquid limiting mechanism. Background technique [0002] The working principle of the immersion lithography machine is to increase the refractive index of light waves in this space by filling the gap between the last optical lens of the projection objective lens and the silicon wafer in the dry lithography system. , the light originally limited by the total reflection of the air can be incident into the liquid to achieve the purpose of increasing the depth of focus and improving the resolution, so as to obtain finer lines. [0003] The structure of the immersion lithography machine is as follows figure 1 As shown, in this device, the illumination system 2, the projection objective lens 4 and the silicon wafer stage 8 are sequentially fixed on the main frame 1, and a silicon wafer 7 coated with photosensitive photoresist is placed on the silicon waf...
Claims
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IPC IPC(8): G03F7/20
Inventor 韦婧宇聂宏飞张洪博赵旭
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD