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Data storage method, memory control circuit unit and memory storage device

A storage unit and data storage technology, applied in static memory, read-only memory, information storage, etc., can solve the problem of reducing the service life of rewritable non-volatile memory storage devices, frequent rewriting times of flash memory, Improve flash memory loss and other issues to achieve the effect of reducing the number of read protection operations, improving service life, and reducing loss

Active Publication Date: 2019-10-25
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are many reasons for the error bit. If the judgment is made based on the error bit alone, the flash memory will be rewritten too frequently, which will increase the wear of the flash memory and reduce the rewritable non-volatile memory. Lifespan of memory storage device

Method used

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  • Data storage method, memory control circuit unit and memory storage device
  • Data storage method, memory control circuit unit and memory storage device
  • Data storage method, memory control circuit unit and memory storage device

Examples

Experimental program
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Embodiment Construction

[0113] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system so that the host system can write data to or read data from the memory storage device.

[0114] figure 2 It is a schematic diagram of a host system and a memory storage device according to an exemplary embodiment.

[0115] Please refer to figure 2 , the host system 1000 generally includes a computer 1100 and an input / output (I / O) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM) 1104 , a system bus 1108 and a data transmission interface 1110 . image 3 It is a schematic diagram of a computer, an input / output device and a memory storage device according to an exemplary embodiment. The input / output device 1106 includes such as image 3 mouse 1202, keyboard 1204, ...

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Abstract

The invention provides a data storage method, a memory control circuit unit and a memory storage device. The data storage method comprises the step of programming data into multiple storage cells connected with a first character line in character lines of a rewritable non-volatile memory module of the memory storage device, wherein a first preset reading voltage is initially set to be applied to the first character line; and the data storage method also comprises the following steps: adjusting the first preset reading voltage for acquiring a first available reading voltage applied to the first character line, applying the first available reading voltage to the first character line for reading data of a first page, and protecting the data of the first page when difference value between the first available reading voltage and the first preset reading voltage is larger than preset threshold value.

Description

technical field [0001] The present invention relates to a data storage method, and in particular to a data storage method for a rewritable non-volatile memory, a memory control circuit unit and a memory storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, and fast read and write speed, it is most suitable for portable electronic products, such as notebook computers. A solid state drive is a storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] According to the number of bits that can be stored in each storage unit, NAND flash memory can be divided into singl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26G11C16/06
Inventor 林纬刘建业林和丰许佑诚
Owner PHISON ELECTRONICS