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An over-temperature protection circuit

An over-temperature protection circuit and circuit technology, applied in emergency protection circuit devices, circuit devices, emergency protection devices with automatic disconnection, etc., can solve the problems of complex circuit structure, low output accuracy, and large layout area of ​​hysteresis comparators. , to achieve the effect of high output precision, flexible setting and preventing thermal oscillation.

Active Publication Date: 2018-01-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the defects of traditional over-temperature protection schemes such as complex circuit structure, low output accuracy, hysteresis comparator and large layout area, the present invention proposes a circuit structure with simple circuit structure and no need for any comparator. Over-temperature protection circuit with hysteresis function

Method used

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Examples

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Embodiment 1

[0025] Such as image 3 As shown, an over-temperature protection circuit includes: a constant current generating circuit 1, an output control circuit 2, and an output shaping circuit 3, wherein,

[0026] The constant current generating circuit 1 includes: a second resistor R2, a second NMOS transistor MN2, a third NMOS transistor MN3, a first PMOS transistor MP1 and a second PMOS transistor MP2, wherein one end of the second resistor R2 is connected to the power supply voltage VCC, and the second The gate of the second NMOS transistor MN2 is connected to the drain, and is connected to the other end of the second resistor R2 and the gate of the third NMOS transistor MN3, and the gate of the first PMOS transistor MP1 is connected to the drain, and is connected to the second PMOS transistor MN3. The gate of the transistor MP2 is connected, the drain of the first PMOS transistor MP1 is connected to the drain of the third NMOS transistor MN3, the sources of the first PMOS transisto...

Embodiment 2

[0043] In embodiment 2 of the present invention, such as Figure 4 As shown, the working principle of the above over-temperature protection circuit is as follows:

[0044] The working principle of this example is similar to that of Example 1, the difference is that the hysteresis control tube M4 in Example 1 is replaced by a PMOS tube by an NMOS tube, and the gates of the PMOS tubes are respectively connected to the gates of the sixth NMOS tube and the sixth PMOS tube. The drains are connected, the source is connected with the drain of the third PMOS transistor, and the drain is connected with the base of the Q0 transistor.

[0045] When the die temperature falls below the thermal shutdown temperature threshold point T 0 At this time, the over-temperature protection outputs a low level, at this time the gate voltage of the M4 tube is high, and the M4 tube is cut off. When the temperature exceeds the thermal shutdown temperature threshold point T 0 At this time, the over-temp...

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Abstract

The invention discloses an over-temperature protection circuit, comprising: a constant current generating circuit, an output control circuit, an output shaping circuit, an NPN transistor Q0 is a control switch tube, and a hysteresis control tube M4 can be either an NMOS tube or a PMOS tube. , the temperature hysteresis can be achieved by introducing additional current after over-temperature, and the hysteresis temperature can be set by adjusting the width-to-length ratio of the M4 tube. The over-temperature protection circuit proposed by the present invention has a simple structure and does not require any high-precision voltage comparison The device has a small number of components and high output precision. It can accurately generate a shutdown signal at the thermal shutdown temperature threshold point, which is convenient for debugging, and has a temperature hysteresis function. The hysteresis temperature setting is flexible and prevents thermal oscillations. Suitable for use in chips such as power supplies and drive circuits.

Description

technical field [0001] The invention relates to an over-temperature protection circuit used in electronic circuits, which is suitable for the field of analog integrated circuits. Background technique [0002] With the continuous development of integrated circuit technology, the integration of integrated circuits is increasing, the number of components integrated on a single chip is increasing, the power consumption of the chip is increasing, and the local temperature of the chip is rising too fast and too high The temperature of the chip will seriously affect the performance and reliability of the chip, and even cause permanent damage to the chip. [0003] In order to avoid damage to the chip caused by excessive temperature, an over-temperature protection circuit is generally introduced into the chip. When the chip temperature reaches a certain value, the chip will stop working and the chip will cool down. [0004] figure 1 It is a traditional over-temperature protection c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02H5/04
Inventor 乔明陈钢李妍月李阳张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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