Check patentability & draft patents in minutes with Patsnap Eureka AI!

esd self-protection and dmos semiconductor device containing the protected lin bus driver

An output driver and protection circuit technology, applied in semiconductor devices, transistors, electro-solid devices, etc., can solve the problems of expensive components, large area of ​​bus drivers and series reverse blocking diodes, etc.

Active Publication Date: 2018-02-13
MICROCHIP TECH INC
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This results in an extremely large area for the bus driver and the series reverse blocking diode, making the components expensive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • esd self-protection and dmos semiconductor device containing the protected lin bus driver
  • esd self-protection and dmos semiconductor device containing the protected lin bus driver
  • esd self-protection and dmos semiconductor device containing the protected lin bus driver

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] According to various embodiments, the hybrid device can provide self-protection drive and reverse voltage blocking capabilities in a very compact structure leading to a very cost-effective solution. According to various embodiments, the protection circuit may be based on a center drain double diffused metal oxide semiconductor (DMOS) transistor. The protection circuit can also act on both nDMOS and pDMOS in the silicon-on-insulator (SOI) process (CAN bus) and nDMOS in the bulk process (LIN bus). Specific example embodiments of nDMOS (LIN bus) integrated circuits will be described below.

[0045] According to various embodiments, compact and self-ESD protection output stages can be provided for LIN and CAN buses and other devices requiring similar protection. LIN and CAN products have extremely high requirements for ESD robustness and require reverse blocking capabilities on their LIN / CAN bus ports. Both products also require high voltage capability (+ / -45V to + / -60V) on ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a double diffused metal oxide semiconductor DMOS dual structure configured as an open drain output driver with electrostatic discharge ESD protection without the need for metal connections for the ESD protection and reverse voltage blocking diode protection. One of a pair of source cells (102b, 104b, 106b) serves as an open-drain output cell, forming eg a reverse blocking diode (234) and enabling bipolar operation in the on state, for ESD self-protection built-in structures, such as built-in SCR. The gate electrode (110b) adjacent to the reverse blocking diode is connected to an open drain output terminal (232).

Description

[0001] Related patent applications [0002] This application claims the 61st jointly owned by Philippe Deval, Marija Fernandez, and Patrick Besseux on January 30, 2013, entitled "ESD-Protection Circuit for Integrated Circuit Device". Priority of US Provisional Patent Application No. 758,590; and is incorporated herein by reference for all purposes. Technical field [0003] The present invention relates to an electrostatic discharge protection circuit in an integrated circuit device capable of, for example, interfacing with a local interconnection network (LIN) bus and the like (for example, as used in automotive electronic devices), and more specifically, The present invention relates to achieving high electrostatic discharge (ESD) robustness during manipulation, insertion, or removal from a LIN bus and the like, and high electromagnetic interference (EMI) immunity when operating the LIN bus and the like. Background technique [0004] The increasing importance of automotive electro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/74
CPCH01L29/7393H01L29/7436H01L27/0266H01L27/1203
Inventor 菲利普·德沃尔马丽亚·费尔南德斯帕特里克·贝萨厄泽罗恩·布雷思韦特
Owner MICROCHIP TECH INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com