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A pressure sensor, its preparation method, and pressure detection system

A technology of pressure sensor and silicon strip, which is applied to the measurement of fluid pressure using optical methods, and the measurement of force by measuring the change of optical properties of materials when they are stressed, can solve the performance deviation of devices, and it is difficult to accurately control the thickness of substrate silicon. , reduce the yield and other problems, to achieve the effect of low bending loss, small size and reduced loss

Active Publication Date: 2017-07-28
SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
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  • Application Information

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Problems solved by technology

In this way, the existing problem is that when using wet etching to process the above structure, it is often difficult to accurately control the thickness of this part of the substrate silicon, so that the actual device performance has a large deviation from the simulation, and also reduces the yield.

Method used

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  • A pressure sensor, its preparation method, and pressure detection system
  • A pressure sensor, its preparation method, and pressure detection system
  • A pressure sensor, its preparation method, and pressure detection system

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Embodiment Construction

[0032] The present invention will be described in further detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0033] Such as Figure 4 and 5As shown in FIG. 2 , they are respectively a three-dimensional structural schematic diagram and a side view structural schematic diagram of the pressure sensor based on the optical waveguide ring resonant cavity according to the specific embodiment. The pressure sensor is etched from an SOI silicon wafer comprising, from top to bottom, a silicon layer, a silicon oxide layer, and a silicon layer. The cavity structure 3 is etched out of the silicon layer at the bottom. The intermediate silicon oxide layer 2 remains unchanged. The structure 1 formed after the silicon layer on the top is etched includes: an input silicon bar unit, a circular silicon bar unit and a coupled light output silicon bar unit. The top view of the structure is as Figure 6 shown.

[0034] The input silicon stri...

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Abstract

The invention discloses a pressure sensor and a manufacturing method thereof, and a pressure detecting system. The pressure sensor is formed by etching an SOI silicon chip comprising a silicon layer, a silicon oxide layer and a silicon layer sequentially arranged from top to bottom. The silicon layer on the bottom forms a chamber structure through etching. The top silicon layer also forms a structure after the etching. The structure comprises an input silicon strip unit, an annular silicon strip unit and a coupling light output silicon strip unit. The input silicon strip unit is used for receiving external light. The annular silicon strip unit is a polygonal one composed of linear silicon strips and medium grooves. The coupling light output silicon strip unit is used for outputting the received light to the outside. Each linear silicon strip cross section structure is composed of two-side silicon layers with a depth h and a middle protruding silicon layer with a depth H and a width W. The h, H and W satisfy certain formula demands. The pressure sensor based on an optical waveguide annular resonant cavity can be coupled with fibers in a high-efficiency way. Furthermore, the pressure sensor which can have a micron size satisfies the miniaturization requirements.

Description

[0001] 【Technical field】 [0002] The invention relates to the technical field of optical pressure sensors, in particular to a pressure sensor based on an optical waveguide ring resonant cavity and a preparation method thereof. [0003] 【Background technique】 [0004] In the second half of the 20th century, the development and popularization of computer and Internet technology brought mankind from the electronic age to the information age. Entering the 21st century, with the upgrading of related technologies and the rise of the information industry, the wave of information revolution has entered a new stage. Human beings are moving from the era of the Internet where everyone is connected to the era of the Internet of Things where everything is connected. As a computer The interface for perceiving the world and various sensors will also be greatly developed and applied in the construction of the Internet of Things. As a large branch of sensors, pressure sensors are widely used ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/24G01L11/02
Inventor 董瑛刘渝进
Owner SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV