Infrared stealth film with selective low emissivity in 8-14 μm band and preparation method thereof

A low emissivity and selectivity technology, applied in the field of infrared stealth film and its preparation, can solve the problems of low emissivity performance and low emissivity, and achieve the effects of small residual thermal stress, good thermal matching and good thermal stability

Active Publication Date: 2017-01-25
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to solve the problem of compatibility between stealth and heat dissipation caused by infrared stealth mentioned in the above background technology, and provide a The 8.0μm~14.0μm band has low emissivity performance, and the 8~14μm band has a low emissivity infrared stealth film with high emissivity performance in other bands. It also provides a correspondingly simple process, good repeatability, and low equipment requirements. Preparation method of infrared stealth film with selective low emissivity in 8-14 μm band

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  • Infrared stealth film with selective low emissivity in 8-14 μm band and preparation method thereof
  • Infrared stealth film with selective low emissivity in 8-14 μm band and preparation method thereof
  • Infrared stealth film with selective low emissivity in 8-14 μm band and preparation method thereof

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Embodiment 1

[0040] a kind of like figure 1 The infrared stealth film with selective low emissivity in the band of 8.0 μm to 14.0 μm is shown in the present invention. The infrared stealth film can regulate the emission radiation of the spectrum to achieve low emissivity in the infrared window band of 8.0 μm to 14.0 μm, High emissivity is achieved in the 5.0μm ~ 8.0μm band.

[0041] The infrared stealth film of this embodiment has a multi-layer film structure with a total of 7 layers, which is mainly composed of layers of high refractive index Ge material and layers of low refractive index ZnS material alternately stacked, from the innermost layer close to the substrate to the outermost layer The high refractive index Ge material layer and the low refractive index ZnS material layer are alternately arranged sequentially, and the innermost layer and the outermost layer both use high refractive index Ge material layers. In the infrared stealth film of the present embodiment, the refractive ...

Embodiment 2

[0054] An infrared stealth film with selective low emissivity in the band of 8.0 μm to 14.0 μm according to the present invention, the infrared stealth film can regulate the emitted radiation of the spectrum to achieve low emissivity in the infrared window band of 8.0 μm to 14.0 μm, High emissivity is achieved in the 5.0μm ~ 8.0μm band.

[0055] The infrared stealth film of this embodiment has a multi-layer film structure with a total of 7 layers, which is mainly composed of layers of high refractive index Ge material and layers of low refractive index ZnS material alternately stacked, from the innermost layer close to the substrate to the outermost layer The high refractive index Ge material layer and the low refractive index ZnS material layer are alternately arranged sequentially, and the innermost layer and the outermost layer both use high refractive index Ge material layers. In the infrared stealth film of the present embodiment, the refractive index of the high refracti...

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Abstract

The invention discloses an infrared stealth film capable of achieving low emissivity in a band range from 8 microns to 14 microns selectively, and the film can achieve the regulation and control of emitted radiation of spectrums, achieves low emissivity in an infrared window from 8 microns to 14 microns, and achieves high emissivity at other bands. The film is in a multilayer structure, and is mainly formed by the alternate overlapping of a high-refraction-index Ge material layer and a low-refraction-index ZnS material layer. The preparation method comprises the steps: firstly washing a substrate; secondly employing a method of radio frequency magnetron sputtering to alternately coat the surface of the substrate with the high-refraction-index Ge material layer and the low-refraction-index ZnS material layer; and properly control the temperature of the substrate, the radio frequency sputtering power and the sputtering time during sputtering coating. The invention aims at the modulation of emitted radiation in the band range from 8 microns to 14 microns under the condition of ambient temperature, and can solve a problem, caused by infrared stealth, of compatibility of stealth with heat radiation. According to the invention, the technology is simple, the repeatability is good, and the requirements for equipment are low.

Description

technical field [0001] The invention belongs to the technical field of functional thin film materials, and in particular relates to an infrared stealth thin film with spectral selectivity and low emission performance and a preparation method thereof. Background technique [0002] In the modern scientific and technological revolution, the application of stealth technology is becoming more and more extensive. Among all kinds of stealth means, infrared stealth is one of the important means, and has received more and more attention. The window bands of infrared detection mainly refer to the bands of 3.0 μm to 5.0 μm and 8.0 μm to 14.0 μm. Among them, when the ambient temperature is at room temperature, the 8.0 μm ~ 14.0 μm band is the main detection window. [0003] In infrared stealth technology, infrared stealth technology measures can be roughly summarized as three aspects: changing the infrared radiation band, reducing the intensity of infrared radiation, and adjusting the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/10B32B19/00C23C14/35
Inventor 彭亮程海峰李俊生郑文伟周永江刘海韬张朝阳
Owner NAT UNIV OF DEFENSE TECH
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