Wide-spectrum flexible photoelectric detector and making method thereof

A technology of a photoelectric detector and a manufacturing method, applied in the field of flexible detection, can solve the problems of difficult to achieve ultra-fast broadband absorption, inability to meet the requirements, and achieve the effects of high photoelectric response speed, easy portability and strong plasticity

Inactive Publication Date: 2015-10-21
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The spectral range and detection bandwidth of traditional silicon-based and gallium-arsenide-based photodetectors are limited by their energy bands and carrier mobility, and it is diffi

Method used

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  • Wide-spectrum flexible photoelectric detector and making method thereof
  • Wide-spectrum flexible photoelectric detector and making method thereof

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[0041] In the following implementations described in conjunction with specific examples, the embodiments and various features and advantageous details herein will be more fully explained with reference to the illustrations in the drawings and the non-limiting embodiments detailed in the following description. The descriptions of well-known components and processing techniques are omitted so as not to unnecessarily obscure the embodiments herein. When fabricating the structure, a well-known conventional process in semiconductor technology can be used. The examples used here are merely to help understand the ways in which the embodiments herein can be implemented, and to further enable those skilled in the art to implement the embodiments herein. Therefore, the examples herein should not be construed as limiting the scope of the embodiments herein.

[0042] It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of ​​the present inventi...

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Abstract

The invention relates to a wide-spectrum flexible photoelectric detector and a making method thereof. The detector sequentially comprises, from top to bottom, a flexible substrate layer, a metal electrode layer grown on the flexible substrate layer, a dielectric layer covering the metal electrode layer, a graphene layer grown on or transferred to the dielectric layer, and a first metal electrode and a second metal electrode which are arranged at the two ends of the graphene layer respectively, wherein the metal electrode layer is a gate electrode, the first metal electrode is a source electrode, and the second metal electrode is a drain electrode. The change in light current between the source and drain electrodes caused by photo-induced carriers in graphene can be detected quickly. As the band gap width of graphene is zero, the wide-spectrum flexible photoelectric detector has high electron mobility and low resistivity. By adopting the detector of the invention, wide-spectrum and quick-response photoelectric detection can be realized. As the photoelectric detector adopts a flexible substrate, the shape of the photoelectric detector can be bent and stretched to realize flexible detection. The wide-spectrum flexible photoelectric detector has wide application prospect.

Description

technical field [0001] The invention relates to the technical field of flexible detection, in particular to a wide-spectrum flexible photodetector and a manufacturing method thereof. Background technique [0002] For photodetectors, the detection spectrum width and response speed are important parameters to measure its performance. The spectral range and detection bandwidth of traditional silicon-based and gallium-arsenide-based photodetectors are limited by their energy bands and carrier mobility, and it is difficult to achieve ultrafast broadband absorption photodetection, that is, traditional photodetectors cannot Satisfies some applications that have strict requirements on device performance. [0003] Compared with the preparation materials of traditional photodetectors, graphene has excellent optical and electrical properties. In the range of visible light, single-layer graphene can transmit about 97.7% of incident light; graphene has excellent electrical conductivity...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/00
CPCH10K77/111H10K30/65Y02E10/549Y02P70/50
Inventor 汤乃云
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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