CYLINDRICAL Cu-Ga ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR

A sputtering target, cylindrical technology, applied in sputtering coating, metal material coating process, ion implantation coating and other directions, can solve the problems of difficult manufacturing methods, cracking, etc., and achieve small fluctuation and high density Effect

Active Publication Date: 2015-10-28
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0020] The above-mentioned methods for producing cylindrical sputtering targets are effective as long as they are made of generally good processability materials, but Cu-Ga alloys used in CIGS-based solar cells form fragile compounds, so it is difficult to Produced by the manufacturing method described in the above-mentioned patent documents
[0021] In addition, when a cylindrical sputtering target is manufactured by a method of manufacturing a flat Cu-Ga alloy sputtering target, problems such as cracking due to stress load also arise.

Method used

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  • CYLINDRICAL Cu-Ga ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
  • CYLINDRICAL Cu-Ga ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
  • CYLINDRICAL Cu-Ga ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR

Examples

Experimental program
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Effect test

Embodiment 1

[0103] In Example 1, the powder manufacturing process was performed first. In the powder production process, in order to produce a cylindrical Cu-Ga alloy sputtering target, Ga as a starting material is 25% by mass and the balance is Cu, which is blended, melted and cast to obtain a Cu-Ga alloy Ingot. Thereafter, the ingot was pulverized and classified by a disc mill to obtain Cu—Ga alloy powder. The average particle size of the classified Cu-Ga alloy powder is 90μm, and the tap density is 5.0g / cm 3 .

[0104] Next, a molding process is performed. In the forming process, in order to form the produced Cu-Ga alloy powder by CIP, the Cu-Ga alloy powder was filled in a rubber mold and processed at a pressure of 250 MPa to obtain a Cu-Ga alloy formed body.

[0105] Next, a HIP process is performed. In the HIP process, first, in order to sinter the Cu-Ga alloy molded body by hot isostatic pressing (HIP), the upper and lower covers, the outer frame, and the hollow middle cylinde...

Embodiment 2

[0114] In Example 2, in the powder production process, Ga as a starting material was blended and melted so that 25% by mass and the balance was Cu, produced by gas atomization, and classified to obtain Cu-Ga alloy powder. The average particle size of the classified Cu-Ga alloy powder is 45μm, and the tap density is 6.2g / cm 3 .

[0115] Next, in the HIP process, Cu-Ga alloy powder was filled between the middle cylinder and the outer frame of the sheath produced in the same manner as in Example 1. As a result, the filling density relative to the specific gravity of the Cu-Ga alloy was 8.6 g / cm 3 was 71.8%. After that, degas from the degassing pipe while heating, crimp and weld the upper cover to seal the sheath (refer to figure 2 ).

[0116] Next, HIP treatment was performed in the same manner as in Example 1 to obtain a Cu—Ga alloy sintered body. Then, in order to confirm the occurrence of cracks and cracks caused by the HIP treatment, radiation transmission inspection w...

Embodiment 3

[0120] In Example 3, in the powder production process, Ga as a starting material was blended so that 25% by mass and the balance was Cu, and melted and casted to obtain a Cu—Ga alloy ingot. Thereafter, the ingot was pulverized and classified with a disc mill to obtain Cu—Ga alloy powder. The average particle size of the classified Cu-Ga alloy powder is 90μm, and the tap density is 5.0g / cm 3 .

[0121] Next, in the molding step, a Cu—Ga alloy molded body was obtained in the same manner as in Example 1.

[0122] Next, in the HIP process, a sheath was produced in the same manner as in Example 1 using a steel plate with a thickness of 1.0 mm.

[0123] Next, the Cu-Ga alloy molded body was filled between the middle cylinder and the outer frame of the sheath, and the Cu-Ga alloy powder was further filled while tapping. As a result, the filling density relative to the specific gravity of the Cu-Ga alloy was 8.6g / cm 3 was 65.2%. After that, degassing is performed from the degassin...

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Abstract

A cylindrical Cu-Ga alloy sputtering target having no cracks or breaks, and having no variation in relative density or Ga concentration. Hot isostatic pressing is used; a Cu-Ga alloy powder or a Cu-Ga alloy molded body is filled in to a cylindrical capsule (1) such that the filling density is at least 60%, the capsule (1) having a thickness of at least 1.0 mm and less than 3.5 mm; the capsule (1) is hot isostatically pressed; and a Cu-Ga alloy sintered body is obtained.

Description

technical field [0001] The present invention relates to a cylindrical Cu-Ga alloy sputtering target used for forming a light absorbing layer of a CIGS (Cu-In-Ga-Se quaternary alloy) solar cell, and a manufacturing method thereof. This application claims priority based on Japanese Patent Application No. Japanese Patent Application No. 2013-012023 for which it applied in Japan on January 25, 2013, By referring this application, it takes in in this application. Background technique [0002] In recent years, solar power generation has attracted attention as one of clean energy sources, and solar cells with crystalline Si are mainly used. Due to supply and cost issues, among thin-film solar cells, CIGS (Cu-In- Ga-Se quaternary alloy)-based solar cells have attracted attention and been put into practical use. [0003] A CIGS-based solar cell has, as a basic structure, a Mo electrode layer formed on a soda-lime glass substrate as a back electrode, and a Cu-In-Ga-Se quaternary laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B22F3/15C22C1/04C22C9/00
CPCC22C1/0425B22F3/15B22F5/10C22C9/00C23C14/3414
Inventor 高桥辰也山岸浩一
Owner MITSUI MINING & SMELTING CO LTD
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