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A kind of online chemical cleaning method of mocvd equipment tail gas treatment system

A technology for tail gas treatment and chemical cleaning, which is applied in the direction of chemical instruments and methods, cleaning methods and utensils, cleaning methods using liquids, etc., can solve the problems of increased white deposits, complicated maintenance process, and affecting the treatment effect, so as to avoid environmental pollution. Pollution, avoiding direct contact, and reducing the effect of cleaning wastewater

Active Publication Date: 2018-09-25
Shandong Huaguang Optoelectronics Co. Ltd.
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Problems solved by technology

[0004] The tail gas treatment system of the existing MOCVD equipment, in the long-term operation, the white deposits on the surface of the Rasi ring filler in the reaction tower increase, which will affect the treatment effect. If it is opened for maintenance, there are disadvantages of high safety risk and long maintenance time, and the maintenance process is complicated. , low maintenance efficiency

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  • A kind of online chemical cleaning method of mocvd equipment tail gas treatment system

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Embodiment Construction

[0016] The present invention replaces the traditional dismantling-type cleaning equipment of the MOCVD equipment tail gas treatment system under the standby state, uses hydrochloric acid as the cleaning agent, and completes the process through gas replacement, reagent concentration selection, pH value control, time selection, and chemical corrosion processes. Cleaning of the attachments on the surface of the Raschig ring and the deposits in the chamber in the exhaust gas treatment system.

[0017] The specific method is to follow the steps below after the MOCVD equipment growth program is over:

[0018] 1. State switching: MOCVD equipment is in standby state, and its exhaust gas treatment system is switched from automatic state to manual state.

[0019] 2. Gas replacement: replace the operating gas 5 of the tail gas treatment system of the MOCVD equipment with H 2 state switch to N 2 (or other non-oxidizing gas) state, replacing H in the exhaust gas treatment system 2 to ...

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Abstract

Provided is an online chemical cleaning method for an exhaust treatment system of an MOCVD device. The exhaust treatment system of the MOCVD device is switched into a standby state from an operating state, a gas inlet of the exhaust treatment system is in an unvented state, or operating gas of the exhaust treatment system is replaced with inoxidizability gas; the exhaust treatment system is switched into a manual operating state, an acid substance solution is added, the pH value of waste water in the exhaust treatment system is regulated to range from 1 to 6, hydrochloric acid cleaning fluid is formed, and circulation spraying through the hydrochloric acid cleaning fluid inside the exhaust treatment system is carried out. According to the method, online chemical cleaning is adopted in the standby state of the device, the production efficiency is improved by 50%, the using amount of a chemical reagent is lowered by 60%, the direct contact between personnel and poisonous materials in the exhaust treatment system is avoided, the personal safety and the labor intensity of device maintenance personnel are guaranteed, the generation of washing waste water caused is reduced, the reliability and the operating efficiency of the exhaust treatment system are improved, and the environment pollution caused by disassembling is avoided.

Description

technical field [0001] The invention relates to a method for cleaning an MOCVD (metal organic compound vapor deposition) equipment tail gas treatment system, and belongs to the technical field of MOCVD equipment tail gas treatment. Background technique [0002] MOCVD technology is a manufacturing technology for III-V compound semiconductor epitaxial materials, and is widely used in the growth of epitaxial materials for light-emitting diodes (LEDs), laser diodes (LDs), and high electron mobility transistors (HEMTs). Most of the reaction gases and MO (metal organic compound) sources used in the MOCVD process are spontaneously combustible and toxic. The reaction gases mainly include phosphine and arsine, which are highly toxic hydrides, and the by-products of the reaction are also toxic. or prone to spontaneous combustion. The tail gas produced by the reaction during the MOCVD process contains a large amount of toxic and dangerous substances (gas and dust). Whether it is an at...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/08
CPCB08B3/08
Inventor 刘永波张新任忠祥
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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