Method for chemically and mechanically polishing sapphire substrate slices in immersed mode

A chemical machinery, sapphire technology, applied in grinding machine tools, grinding devices, metal processing equipment, etc., can solve the problems of polishing pad degumming, sapphire substrate inlay, bubbling, etc., to reduce the number of scratches, improve the polishing effect, avoid The effect of micro scratches

Active Publication Date: 2015-11-04
TUNGHSU GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, sapphire substrates are mainly processed by chemical mechanical polishing. However, the traditional processing method has the following problems: the polishing pad is directly exposed to the air during processing, and the surface is only covered with a thin layer of polishing liquid, and the surface temperature of the polishing pad will decrease. As the polishing time increases, it will increase, resulting in degumming and bubbling of the polishing pad, causing the sapphire substrate to be embedded in the adsorption pad, shortening the service life of the polishing pad and the adsorption pad, and in serious cases directly causing the adsorption pad and the polishing pad. , all sapphire substrates are scrapped; at the same time, the sapphire substrate is placed horizontally, and the micro particles generated during the polishing process adhere to the surface of the polishing pad and are not easy to fall off. The micro particles will cause micro scratches on the surface of the sapphire substrate and affect the surface polishing of the sapphire substrate. quality

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  • Method for chemically and mechanically polishing sapphire substrate slices in immersed mode

Examples

Experimental program
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Effect test

Embodiment 1

[0024] A kind of sapphire substrate submerged chemical mechanical polishing method, its polishing method is as follows:

[0025] (1) Pretreatment

[0026] ①Paste 100 pieces of 2-inch sapphire substrates cleaned after copper polishing on the hard ceramic discs with adsorption pads, each hard ceramic disc is pasted with 25 pieces, and then the hard ceramic discs with sapphire substrates attached Soak in reverse osmosis pure water for 15 minutes. At this time, check whether there are air bubbles and particles under the sapphire substrate, and the hard ceramic plate 1 with the sapphire substrate attached;

[0027] ② Install the hard ceramic plate 1 with the sapphire substrate attached on the main shaft 2 of the polishing machine equipment, and fix it with the buckle 3, and place the polishing pad on the rotating chassis 6;

[0028] ③Mix the reverse osmosis pure water and silicon dioxide polishing solution to obtain a mixed solution. The volume ratio of reverse osmosis pure water ...

Embodiment 2

[0036] A kind of sapphire substrate submerged chemical mechanical polishing method, its polishing method is as follows:

[0037] (1) Pretreatment

[0038] ①Paste 28 pieces of 4-inch sapphire substrates cleaned after copper polishing on the hard ceramic disc with adsorption pads, and each hard ceramic disc is pasted with 7 pieces, and then the hard ceramic disc with the sapphire substrate attached Soak in reverse osmosis pure water for 15 minutes. At this time, check whether there are air bubbles and particles under the sapphire substrate, and the hard ceramic plate 1 with the sapphire substrate attached;

[0039] ② Install the hard ceramic plate 1 with the sapphire substrate attached on the main shaft 2 of the polishing machine equipment, and fix it with the buckle 3, and place the polishing pad on the rotating chassis 6;

[0040] ③Mix the reverse osmosis pure water and silicon dioxide polishing solution to obtain a mixed solution. The volume ratio of reverse osmosis pure wat...

Embodiment 3

[0048] A kind of sapphire substrate submerged chemical mechanical polishing method, its polishing method is as follows:

[0049] (1) Pretreatment

[0050] ① Attach 72 pieces of 55 X 55 square sapphire substrates cleaned after copper polishing to the hard ceramic plate with adsorption pads. Each hard ceramic plate is bonded with 18 pieces, and then the hard Soak the ceramic plate in reverse osmosis pure water for 15 minutes. At this time, check whether there are air bubbles and particles under the sapphire substrate, and the hard ceramic plate 1 with the sapphire substrate attached;

[0051]② Install the hard ceramic plate 1 with the sapphire substrate attached on the main shaft 2 of the polishing machine equipment, and fix it with the buckle 3, and place the polishing pad on the rotating chassis 6;

[0052] ③Mix the reverse osmosis pure water and silicon dioxide polishing solution to obtain a mixed solution. The volume ratio of reverse osmosis pure water and silicon dioxide p...

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Abstract

The invention relates to a method for chemically and mechanically polishing sapphire substrate slices in an immersed mode. The polishing method comprises the following steps that firstly, preprocessing is conducted, wherein the sapphire substrate slices are attached to a hard ceramic disk, the hard ceramic disk is installed on a main shaft of a polishing machine, a polishing gasket is installed on a rotating bottom disk, reverse osmosis pure water and a silicon dioxide polishing solution are mixed and added into the polishing machine, and the liquid level is kept between the upper liquid level line and the lower liquid level line of the polishing liquid; secondly, polishing is conducted, wherein the polishing machine is started for polishing the sapphire substrate slices, the polishing time ranges from 40 min to 80 min, and then the polished sapphire substrate slices are obtained; and thirdly, the finished sapphire substrate slices are washed. According to the chemical and mechanical polishing method, the temperature rising of the surface of the polishing gasket in the polishing process is small, the service life of the polishing gasket and an adsorption gasket is long, and no tiny scratch exists on the surfaces of the sapphire substrate slices in the polishing process.

Description

technical field [0001] The invention relates to a sapphire substrate immersion chemical mechanical polishing method, belonging to the field of sapphire substrate chemical mechanical polishing processing technology. Background technique [0002] Sapphire single crystal material has the characteristics of high hardness, high melting point, good light transmission, excellent electrical insulation, stable chemical properties, etc., and is widely used as epitaxial substrate material for semiconductor gallium nitride (GaN) light-emitting diodes. [0003] In order to prepare high-quality epitaxial films and improve luminous efficiency, the sapphire substrate must be subjected to surface precision polishing. At present, sapphire substrates are mainly processed by chemical mechanical polishing. However, the traditional processing method has the following problems: the polishing pad is directly exposed to the air during processing, and the surface is only covered with a thin layer of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00B24B1/00
CPCB24B1/00B24B37/00
Inventor 秦光临吴明山王禄宝
Owner TUNGHSU GRP
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