Method for chemically and mechanically polishing sapphire substrate slices in immersed mode

Abstract

The invention relates to a method for chemically and mechanically polishing sapphire substrate slices in an immersed mode. The polishing method comprises the following steps that firstly, preprocessing is conducted, wherein the sapphire substrate slices are attached to a hard ceramic disk, the hard ceramic disk is installed on a main shaft of a polishing machine, a polishing gasket is installed on a rotating bottom disk, reverse osmosis pure water and a silicon dioxide polishing solution are mixed and added into the polishing machine, and the liquid level is kept between the upper liquid level line and the lower liquid level line of the polishing liquid; secondly, polishing is conducted, wherein the polishing machine is started for polishing the sapphire substrate slices, the polishing time ranges from 40 min to 80 min, and then the polished sapphire substrate slices are obtained; and thirdly, the finished sapphire substrate slices are washed. According to the chemical and mechanical polishing method, the temperature rising of the surface of the polishing gasket in the polishing process is small, the service life of the polishing gasket and an adsorption gasket is long, and no tiny scratch exists on the surfaces of the sapphire substrate slices in the polishing process.

Description

technical field [0001] The invention relates to a sapphire substrate immersion chemical mechanical polishing method, belonging to the field of sapphire substrate chemical mechanical polishing processing technology. Background technique [0002] Sapphire single crystal material has the characteristics of high hardness, high melting point, good light transmission, excellent electrical insulation, stable chemical properties, etc., and is widely used as epitaxial substrate material for semiconductor gallium nitride (GaN) light-emitting diodes. [0003] In order to prepare high-quality epitaxial films and improve luminous efficiency, the sapphire substrate must be subjected to surface precision polishing. At present, sapphire substrates are mainly processed by chemical mechanical polishing. However, the traditional processing method has the following problems: the polishing pad is directly exposed to the air during processing, and the surface is only covered with a thin layer of ...

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Problems solved by technology

At present, sapphire substrates are mainly processed by chemical mechanical polishing. However, the traditional processing method has the following problems: the polishing pad is directly exposed to the air during processing, and the surface is only covered with a thin layer of polishing liquid, and the surface temperature of the polishing pad will decrease. As the polishing time increases, it will increase, resulting in degumming and bubbling of the polishing pad, causing the sapphire substrate to be embedded in the adsorption pad, shortening the service life of the polishing pad and the adsorption pad, and in serious cases directly causing the adsorption pad and the polishing pad. , all sapphire substrates are scrapped; at the same time, the sapphire substrate is placed horizontally, and the micro particles generated during the polishing process adhere to the surface of the polishing pad and are not easy to fall off. The micro particles will cause micro scratches on the surface of the sapphire substrate and affect the surface polishing of the sapphire substrate. quality

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