DRAM with SDRAM interface, and hybrid flash memory module

A memory module, memory technology, applied in static memory, memory system, digital memory information and other directions, can solve problems such as inability to meet, and achieve the effect of increasing processing capacity

Active Publication Date: 2015-11-04
HITACHI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The large-capacity trend of the main storage device composed of DRAM (Dynamic Random Access Memory, dynamic random access memory) still has the backwardness of three-dimensional memory packaging technology (TSV), which cannot meet the above requirements

Method used

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  • DRAM with SDRAM interface, and hybrid flash memory module
  • DRAM with SDRAM interface, and hybrid flash memory module
  • DRAM with SDRAM interface, and hybrid flash memory module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0044] Figure 14It is a figure which shows the structure of the memory module concerning an embodiment. The memory module 60 has a substrate 61 , socket terminals 62 , a plurality of high-speed memories 63 , a plurality of nonvolatile memories 64 which are mass memories having a storage capacity larger than the high-speed memories, and a plurality of controllers 65 . The controller 65 is mounted on the socket terminal 62 side of the first surface of the substrate 61 , and the high-speed memory 63 is mounted on the second surface of the substrate 61 . The nonvolatile memory 64 is mounted at a position away from the socket terminal 62 . In other words, the nonvolatile memory 64 is mounted on the side opposite to the socket terminal 62 with respect to the controller 65 . Furthermore, the nonvolatile memory 64 is mounted on the side opposite to the socket terminal 62 with respect to the high speed memory 63 .

[0045] With the above configuration, the controller 65 and the hig...

Embodiment

[0047] In this embodiment, a server is described as an example of an information processing device, but it is also applicable to an information processing device other than a server, such as a PC (Personal Computer). Furthermore, although a memory module with ECC is described as an example of a memory module, it is also applicable to a memory module without ECC. In addition, SDRAM (DRAM) is used as an example of the high-speed memory for description, but the high-speed memory may also be, for example, MRAM (Magnetic Random Access Memory, Magnetic Random Access Memory), STT (Spin Transfer Torque, spin torque)-RAM, phase change memory, etc. In addition, SDRAM is also an example of a volatile semiconductor memory that cannot store data when the power is turned off. A flash memory will be described as an example of a nonvolatile memory, but it is not limited thereto, and any semiconductor memory may be used as long as it can store data even when the power is turned off, and can s...

Deformed example 1

[0117] Figure 10 is a diagram showing the component arrangement of the hybrid memory module according to Modification 1. Figure 10 (a) represents the surface of the memory module, Figure 10 (b) shows the back side of the hybrid memory module. In DIMM 50A according to Modification 1, data memory controller (MCD) 21D and SDRAM (DRAM) 22S are alternately arranged on the front and back of substrate 51 . The configuration of the address memory controller (MAC) 21A, the flash memory (Flash) 23F, the SPD 31, and the socket terminal 52 is the same as that of the memory module 50 according to the embodiment. Since there are many wires between the data memory controller (MCD) 21D and the flash memory (Flash) 23F, it is possible to generate ample wiring by alternately setting the data memory controller (MCD) 21D and SDRAM (DRAM) 22S .

[0118] In addition, in Figure 10 In the above, five data memory controllers (MCD) 21D and four SDRAM (DRAM) 22S are arranged on the surface of t...

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Abstract

When a DRAM, which is a high-speed memory, and a flash memory, which is a nonvolatile memory and is slower than a DRAM but can have a larger capacity, are mounted in a dual inline memory module (DIMM), the arrangement of the components presents a problem in terms of maximizing the CPU memory bus throughput. Therefore, with the disclosed memory module (DIMM) a memory controller is arranged on the side nearer the socket terminal, and the DRAM, which is a high-speed memory, is arranged on the back surface thereof. The flash memory, which is a large-capacity memory, is arranged on the side farther from the socket terminal.

Description

technical field [0001] The present invention relates to a memory module, which can be applied to, for example, a memory module in which a nonvolatile memory and a volatile memory are mixed. Background technique [0002] In fields such as servers, there is an increasing demand for high-speed access to large volumes of data in the form of databases (DBs) in the era of big data. The trend of increasing the capacity of the main storage device composed of DRAM (Dynamic Random Access Memory, dynamic random access memory) still has the backwardness of three-dimensional memory packaging technology (TSV), which cannot meet the above-mentioned requirements. In addition, the processing capacity (waiting time) of DRAM and SSD (Solid State Drive, solid state drive) connected to SAS (Serial Attached SCSI, Serial Attached SCSI) as an auxiliary storage device or HDD (Hard Disk Drive, hard disk drive) ) between 10 6 The difference between left and right. [0003] Therefore, a PCI (Periphe...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): G06F12/06G06F12/00G11C5/00
CPCG11C5/04G06F13/1694G11C7/10G06F3/068G06F3/0611G06F3/0629
Inventor植松裕村冈谕大坂英树柴田正文福村裕佑渡边聪柿田宏出居昭男上野仁尾野孝之宫川贵志内藤伦典隅仓大志福田裕一
OwnerHITACHI LTD