Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot perovskite co-sensitization solar cell and preparation method thereof

A technology of solar cells and quantum dots, applied in photosensitive devices, circuits, capacitors, etc., can solve the problem of low photoelectric conversion efficiency, and achieve the effect of improving photoelectric conversion efficiency, improving light absorption and photoelectric conversion, and improving performance

Active Publication Date: 2015-11-11
CENT SOUTH UNIV
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the defect of low photoelectric conversion efficiency of perovskite solar cells to sunlight in the near-infrared region in the prior art, and to provide a quantum dot perovskite co-sensitized solar cell and its preparation method, the solar cell has high infrared absorption and photoelectric conversion efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028]A kind of quantum dot perovskite co-sensitization solar cell of the present invention, its preparation method comprises the following steps:

[0029] 1) Using the spin coating method (3200rpm rotation speed, 50s rotation time), the TiO 2 Slurry (TiO 2 The solid-to-liquid mass ratio of solvent ethanol = 1:2.5) is deposited on the surface of conductive glass to form a film, and it is treated at 460°C for 45 minutes to form TiO 2 Photoanode.

[0030] 2) Using continuous ion layer adsorption reaction (SILAR) on TiO 2 Depositing Ag on the photoanode 2 S quantum dot material, forming Ag 2 TiO adsorbed by S quantum dots 2 Photoanode;

[0031] Among them, in the process of preparing quantum dots by the continuous ion layer adsorption reaction method, the quantum dot material Ag 2 Cationic solution of S (AgNO 3 ) and anion solution (Na 2 The ion concentration of S) is 0.2mol / L, the ion molar concentration ratio of cation and anion solution=1:1; the solvent used is ethano...

Embodiment 2

[0042] A kind of quantum dot perovskite co-sensitization solar cell of the present invention, its preparation method comprises the following steps:

[0043] 1) Spin coating method (speed 2200rpm, spin time 60s) to coat TiO 2 Slurry (TiO 2 The solid-to-liquid mass ratio of solvent ethanol = 1:2.8) is deposited on the surface of conductive glass to form a film, and after being treated at 500°C for 60 minutes, TiO is formed 2 Photoanode.

[0044] 2) Using continuous ion layer adsorption reaction (SILAR) on TiO 2 Depositing Ag on the photoanode 2 Se quantum dot material, forming Ag 2 TiO adsorbed by Se quantum dots 2 Photoanode.

[0045] Among them, in the process of preparing quantum dots by the continuous ion layer adsorption reaction method, the quantum dot material Ag 2 Se cationic solution (AgNO 3 ) and anion solution (Na 2 The ion concentration of Se) solution is 0.04mol / L, the ion concentration ratio of cation and anion solution=2:1; the solvent used is methanol; t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to View More

Abstract

The present invention discloses a quantum dot perovskite co-sensitization solar cell and a preparation method thereof. The preparation method of the quantum dot perovskite co-sensitization solar cell comprises the following steps of 1) preparing a TiO2 photo-anode on a conductive substrate; 2) depositing an Ag2S or Ag2Se quantum dot material on the TiO2 photo-anode to form the quantum dot adsorbed TiO2 photo-anode; 3) depositing a surface modification material ZnS quantum dot on the photo-anode after step 2) to form the surface modification quantum dot adsorbed TiO2 photo-anode; 4) preparing a CH3NH3PbX3 film, a cavity transmission layer and a counter electrode on the photo-anode after step 3) orderly to obtain the quantum dot perovskite co-sensitization solar cell, wherein X=Cl, I or Br. According to the present invention, the ZnS quantum dot surface modification Ag2S and Ag2Se and a perovskite light absorption material are used as a composite light absorption layer of the perovskite solar cell together, so that the photoelectric conversion efficiency of the perovskite solar cell can be improved effectively and greatly.

Description

technical field [0001] The invention relates to a quantum dot perovskite co-sensitized solar cell and a preparation method thereof, in particular to a method for enhancing infrared light absorption and photoelectric conversion in the perovskite solar cell. Background technique [0002] Facing the current crisis of energy and environment, solar energy, as a renewable clean energy, can well solve the increasingly acute contradiction between environment and energy in human society. Solar photovoltaic devices can directly convert solar energy into electrical energy. In this field, the development of new solar cells with high efficiency and low cost is the technical basis for the wide application of solar photovoltaic power generation. Since Kojima prepared the first perovskite solar cell with an efficiency of 3.8% in 2009, this perovskite-based light-absorbing material CH 3 NH 3 wxya 3 (X represents a halogen element) solar cells have attracted worldwide attention. So far, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042
Inventor 杨英郭学益高菁崔嘉瑞
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com