Monolithic integrated electrically pumped Bragg reflection waveguide terahertz laser
An integrated electric pump and terahertz technology, applied in semiconductor lasers, lasers, laser parts, etc., can solve the problem of inability to achieve terahertz laser output, and achieve the effects of strong mode selection, small size, and high gain coefficient.
Active Publication Date: 2018-06-22
吉光半导体科技有限公司
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Problems solved by technology
[0005] In order to solve the problem that the Bragg reflective waveguide is used alone for nonlinear frequency conversion waveguide or semiconductor laser waveguide, the terahertz wave laser output cannot be realized, and a compact, single-chip integrated electric pump terahertz laser is provided.
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Embodiment 1
[0027] Such as image 3 As shown, both the N-DBR and P-DBR of the laser use AlGaAs / Al 0.2 Ga 0.8 As material, in which the high and low refractive index layers AlGaAs and Al 0.2 Ga 0.8 The refractive index of the As material is approximately n H , n L . By controlling the period and duty cycle of the DBRI grating, the output wavelength λ of the first DBR-BRL 1 1 =1050nm; by controlling the period and duty cycle of the DBRⅡ grating, the output wavelength of the second DBR-BRL 2 is at λ 2 = 1060nm. Two beams of laser light with different wavelengths are coupled into one beam through the Y waveguide 3 and then enter the power amplifier 4, and finally enter the nonlinear waveguide 5 to generate terahertz laser output through the optical difference frequency effect. In the near-infrared band, that is, the pumping light band, the Bragg reflection waveguide works in the suppressed tunneling photonic bandgap guided mode (n L eff H ), using total reflection and photonic bandga...
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The monolithically integrated electrically pumped Bragg reflection waveguide terahertz laser belongs to the field of optoelectronic devices. In order to solve the problems existing in the output of the existing terahertz laser, the laser adopts a Bragg reflection waveguide structure in the vertical direction, which includes: two adjacent distributions Type Bragg reflection laser, the back cavity surface is etched with distributed Bragg gratings with slightly different periods and duty ratios, so that the output wavelengths of the two lasers have a certain difference; Y-waveguide beam coupler, the two input ends on one side It is respectively connected with the above two lasers, and the other end is coupled to output a dual-wavelength laser; the laser power amplifier is connected to the output end of the Y-waveguide, and amplifies the power of the injected dual-wavelength laser; the passive Bragg reflection waveguide nonlinear frequency conversion part is connected with the The output ends of the laser power amplifiers are connected, so that the injected lasers with different wavelengths λ1 and λ2 generate a difference frequency of 1 / λ1‑1 / λ2=1 / λ3, so as to realize the output of the terahertz laser λ3.
Description
technical field [0001] The invention relates to a single-chip integrated and electrically pumped Bragg reflection waveguide nonlinear frequency conversion light source output by terahertz laser, belonging to the technical field of optoelectronic devices. Background technique [0002] Terahertz (THz) waves usually refer to electromagnetic waves with a frequency of 0.1THz-10THz (the corresponding wavelength is 3mm-30μm). It has very broad application prospects in the fields of material structure characterization, biomedicine, environmental monitoring, security inspection and national defense. Terahertz waves can be generated electronically or optically, but each method has advantages and disadvantages. The efficiency of terahertz radiation generated by methods such as photoconductive antenna, optical rectification, plasma oscillation and electronic nonlinear transmission line is very low, and the average power of the emitted terahertz beam is only on the order of nanowatts to ...
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IPC IPC(8): H01S5/187H01S5/343H01S5/042H01S5/06
Inventor 汪丽杰佟存柱田思聪舒世立吴昊王立军
Owner 吉光半导体科技有限公司