A wafer cutting equipment combining laser cutting and mechanical cleavage

Abstract

The invention relates to a wafer cutting device combining laser cutting and mechanical splitting. The wafer cutting device comprises a base, an annular guide rail and a vacuum absorption conveying device, wherein at least two support posts are vertically arranged on the base, uniformly distributed on the periphery of the annular guide rail, and connected with the outer side of the annular guide rail; fixing devices for fixing to-be-cut crystals are mounted on the base, and among the support posts, the inner side of the annular guide rail is provided with two motor brackets capable of carrying out circling motion along the annular guide rail, each motor bracket is provided with a guide rail and a mobile motor capable of moving along the radial direction of the annular guide rail, the two mobile motors are respectively provided with a mechanical cutter and a laser cutting head, the vacuum absorption conveying device comprises a conveying device base, a drive device, a driving roller and a vacuum absorption conveying belt, and the vacuum absorption conveying belt is positioned above the annular guide rail and surrounds the driving roller. Compared with the prior art, the wafer cutting device is convenient to use, high in cutting wafer cutting efficiency, small in material loss and low in cost.

Description

technical field [0001] The invention relates to the field of wafer cutting, in particular to a wafer cutting device. Background technique [0002] The current wafer cutting, such as the cutting of monocrystalline silicon, mainly adopts the wire cutting method or laser cutting method, that is, a wire cutting machine or a laser cutting machine is required; the wire cutting machine can cut high strength, high toughness, high hardness, high brittleness, Magnetic materials, as well as precise, small and complex-shaped parts, but the wire-cutting mechanism of the wire cutting machine is more complicated, and the failure rate is higher. If you are not familiar with the structure, a small failure will affect the processing and even cause the machine tool to stop; The laser cutting machine uses a high-power-density laser beam to irradiate the material to be cut, so that the material is quickly heated to the vaporization temperature, and evaporates to form holes. As the beam moves to ...

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Problems solved by technology

[0002] The current wafer cutting, such as the cutting of monocrystalline silicon, mainly adopts the wire cutting method or laser cutting method, that is, a wire cutting machine or a laser cutting machine is required; the wire cutting machine can cut high strength, high toughness, high hardness, high brittleness, Magnetic materials, as well as precise, small and complex-shaped parts, but the wire-cutting mechanism of the wire cutting machine is more complicated, and the failure rate is higher. If you are not familiar with the structure, a small failure will affect the processing and even cause the machine tool to stop; The laser cutting machine uses a high-power-density laser beam to irradiate the material to be cut, so that the material is quickly heated to the vaporization temperature, and evaporates to form holes. As the beam moves to the material, the holes are continuously formed with a narrow width (such as about 0.1mm). The slit is used to complete the cutting of the material. The cutting speed is fast and the quality is high. However, due to the limitation of laser power and equipment volume, laser cutting can only cut plates and pipes with medium and small thickness. As the thickness of the workpiece increases, The cutting speed is obviously reduced, and laser cutting is used for high investment cost and energy consumption when cutting wafers. In addition, the ingot is cut by wire cutting method or laser cutting method alone, and the cutting opening is wide, generally at 100-300 Between microns, a large amount of crystal ingot material will be wasted, even if it is an advanced cutting machine, the material consumption is between 20% and 30%

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