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Method for directly preparing nanometer silicon powder in electrolytic refining process

A technology of nano-silica powder and electrolytic refining, which is applied in the direction of photographic process, instrument, photographic auxiliary process, etc., can solve the problems of unsuitable for large-scale production, expensive equipment, high cost, etc., and achieve the easy control of the electrolytic process, which is conducive to recycling and reuse , the effect of reducing the preparation cost

Active Publication Date: 2015-11-18
湖南宸宇富基新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Among the above methods, the commonly used physical or chemical deposition needs to provide laser, plasma or high temperature, and the equipment is expensive, so the cost is high
In the thermal reduction process, due to the occurrence of side reactions, the yield of the product is low, which is not suitable for large-scale production
The chemical etching method also has expensive raw materials and high experiment costs. The experimental raw materials used are highly corrosive, and the reaction solution is not easy to handle. Therefore, it is not suitable for large-scale market applications.

Method used

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  • Method for directly preparing nanometer silicon powder in electrolytic refining process
  • Method for directly preparing nanometer silicon powder in electrolytic refining process

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Experimental program
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Effect test

Embodiment 1

[0043] Step 1: Prepare copper-silicon-iron alloy, which contains 3.5wt% silicon, 0.1wt% iron, and the balance is copper. First, weigh copper powder, silicon powder and iron powder according to the ratio of each component in the alloy, and mix them evenly and place them in 10 -5 Melting at 1400°C in a vacuum electric arc furnace with a vacuum degree of Pa, and cooling to obtain a master alloy ingot after all the materials are melted.

[0044] Step 2: Preparation of copper-silicon-iron alloy anode

[0045] The obtained master alloy ingot was melted again at 1400° C. under the protection of argon, and then cast into an anode plate with a thickness of 4 mm.

[0046] Step 3: Electrolytic Refining

[0047] Cut the alloy plate obtained in step 2 into a length and width of 100mm×60mm, and use it as an anode, use stainless steel of the same size as a cathode, and put the anode and cathode in direct opposition, the distance between the electrodes is 30mm, and the electrolyte is copper...

Embodiment 2

[0051] Step 1: Prepare copper-silicon-zinc-manganese alloy, which contains 3.5wt% silicon, 3.5wt% zinc, 0.5wt% manganese, and the balance is copper. First, weigh copper powder, silicon powder, zinc powder and manganese powder according to the ratio of each component in the alloy, and mix them evenly and place them in 10 -3 Melting at 1250°C in a vacuum electric arc furnace with a vacuum degree of Pa, and cooling to obtain a master alloy ingot after all the materials are melted.

[0052] Step 2: Preparation of copper-silicon-zinc-manganese alloy anode

[0053] The obtained master alloy ingot was melted again at 1250° C. under the protection of argon, and then cast into an anode plate with a thickness of 4 mm.

[0054] Step 3: Electrochemical Electrorefining

[0055] Cut the alloy plate obtained in step 2 into a length and width of 100mm×60mm, and use it as an anode, use stainless steel of the same size as a cathode, and put the anode and cathode in direct opposition, the dist...

Embodiment 3

[0058] Step 1: Prepare copper-silicon-zinc-nickel-manganese alloy, which contains 1wt% silicon, 0.2wt% zinc, 2.4wt% nickel, 0.1wt% manganese, and the balance is copper. First, weigh copper powder, silicon powder, zinc powder, nickel powder and manganese powder according to the ratio of each component in the alloy, and mix them evenly and place them in 10 -5 Melting at 1350°C in a vacuum electric arc furnace with a Pa vacuum degree, and cooling to obtain a master alloy ingot after all the materials are melted.

[0059] Step 2: Preparation of copper-silicon-zinc-manganese alloy anode

[0060] The obtained master alloy ingot was melted twice at 1350° C. under the protection of argon, and then cast into an anode plate with a thickness of 4 mm.

[0061] Step 3: Electrochemical Electrorefining

[0062] Cut the alloy plate obtained in step 2 into a length and width of 100mm×60mm, and use it as an anode, use stainless steel of the same size as a cathode, and put the anode and cathod...

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Abstract

The invention relates to the field of nanometer material preparation, in particular to a method for directly preparing nanometer silicon powder materials in the electrolytic refining process. The method comprises the steps that SiMe alloy with Si is used as an anode for electrolysis, and a cathode obtains electrolytic refining metal Me; anode mud produced through electrolysis is collected and acidized, after metal impurities are removed, deionized water is used for thorough cleaning, and therefore nanometer silicon powder with the particle size being 20-30 nm is obtained; and the SiMe alloy comprises, by mass, 0.5-13% of Si and the balance Me. Compared with an existing nanometer silicon preparing method, the method is low in cost, easy to operate and suitable for large-scale production.

Description

technical field [0001] The invention relates to the field of nano material preparation, in particular to a method for directly preparing nano silicon powder in an electrolytic refining process. Background technique [0002] Due to its special surface effect and quantum size effect, nano-silicon has relatively unique optical and electrical characteristics, and shows many performances different from traditional materials in terms of energy conversion. Therefore, it has received widespread attention in many fields. [0003] At present, there are mainly the following methods for preparing nano-silicon. 1) Quasi-laser ablation method: The reactant undergoes a chemical reaction under the action of a laser to precipitate ultrafine powder. 2) Chemical vapor deposition: the silicon-containing precursor is pyrolyzed under heating conditions, and nano-silicon is deposited on the surface of the substrate under the action of a catalyst. 3) Magnetron sputtering method: different from t...

Claims

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Application Information

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IPC IPC(8): C25C1/00
Inventor 周向阳杨娟唐晶晶任永鹏聂阳刘宏专
Owner 湖南宸宇富基新能源科技有限公司