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Hard mask composition and method of forming pattern using same

A technology of composition and hard mask, which is applied in the photolithographic process of patterned surface, photosensitive materials used in optomechanical equipment, instruments, etc., can solve the problems such as difficulty in providing clear and fine patterns, so as to ensure heat resistance and the effect of etch resistance

Active Publication Date: 2020-03-13
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Today, depending on the small size of the pattern to be formed, it is difficult to provide fine patterns with clear outlines only by the above-mentioned typical photolithography techniques

Method used

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  • Hard mask composition and method of forming pattern using same
  • Hard mask composition and method of forming pattern using same
  • Hard mask composition and method of forming pattern using same

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0110] 21.83 grams of hydroxypyrene, 25.81 grams of 4,4'-bismethylmethoxy-diphenyl ether, 1.23 grams of diethyl sulfate and 32.58 grams of propylene glycol monomethyl ether acetate (PGMEA ) was placed in a flask, and then stirred at 100° C. for 2 hours to 6 hours to conduct a polymerization reaction. The reaction is complete when the weight average molecular weight of the polymer is 2,000 to 3,500. When the polymerization reaction was terminated, the reactant was slowly cooled to room temperature, and added to 40 g of distilled water and 400 g of methanol, and the mixture was vigorously stirred and allowed to stand. After removing the supernatant therefrom, the precipitate generated therein was dissolved in 80 g of cyclohexanone, and the solution was vigorously stirred using 320 g of methanol and allowed to stand (first process). Then, after removing the resulting supernatant therefrom again, the precipitate therein was dissolved again in 80 g of cyclohexanone (second process...

Synthetic example 2

[0114] 22.53 g of 9,9-bis(6-hydroxy-2-naphthyl)fluorene, 12.91 g of 4,4'-bismethylmethoxy-diphenyl ether, 0.77 g of diethyl sulfate and 59.07 g of propylene glycol mono Methyl ether acetate (PGMEA) was placed in the flask, and then stirred at 100° C. for 5 hours to 12 hours to perform a polymerization reaction. The reaction is complete when the weight average molecular weight of the polymer is 2,000 to 3,500. When the polymerization reaction was terminated, the reactant was cooled to room temperature, and then added to 40 g of distilled water and 400 g of methanol, and the mixture was vigorously stirred and allowed to stand. After removing the supernatant therefrom, the precipitate therein was dissolved in 80 g of cyclohexanone, and the solution was stirred by using 320 g of methanol and allowed to stand (first process). Here, the supernatant was removed therefrom again, and the precipitate therein was dissolved in 80 g of cyclohexanone (second process). The first process an...

Synthetic example 3

[0118] The three-necked flask was immersed in a 100°C oil thermostat. The flask was maintained at the same temperature and stirred by using a stirring magnetic bar. Subsequently, 43.65 grams (0.2 moles) of pyrene-4-ol and 33.24 grams (0.2 moles) of 1,3-bis(methoxymethyl)benzene were placed in the reactor and dissolved in 52 grams of propylene glycol monomethyl ether acetic acid ester (PGMEA). Then, 1.23 g (8 mmol) of diethyl sulfate was added to the reactor.

[0119] Polymerization was performed while maintaining the reactor at 100° C., the weight average molecular weight of the polymerization reactant was measured by taking samples therefrom every hour, and the reaction was completed when the weight average molecular weight reached 3,500 to 4,000.

[0120] When the polymerization reaction was terminated, the reactant was slowly cooled to room temperature, and then added to 30 g of distilled water and 300 g of methanol, and the mixture was vigorously stirred and allowed to s...

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Abstract

In the Chemical Formula 1, A and B are the same as defined in the detailed description.

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2014-0059252 filed in the Korean Intellectual Property Office on May 16, 2014, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to a hard mask composition and a method of forming a pattern using the hard mask composition. Background technique [0004] Recently, the semiconductor industry has advanced to ultra-fine technology with patterns in the size of several nanometers to tens of nanometers. The ultra-fine technology mainly requires efficient photolithography. A typical photolithography technique includes: providing a material layer on a semiconductor substrate; coating a photoresist layer on the material layer; exposing and developing the photoresist layer to provide a photoresist pattern; and using the photoresist The pattern acts as a mask to etch the materi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/11G03F7/00
CPCG03F7/0752G03F7/091G03F7/094G03F7/40H01L21/02115H01L21/0214H01L21/0276C08L65/00H01L21/3081H01L21/3086H01L21/31144H01L21/32139
Inventor 南沇希金美英朴惟廷金润俊金惠廷文俊怜宋炫知李忠宪崔有廷
Owner SAMSUNG SDI CO LTD
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