Plasma treatment device

Abstract

The present invention provides a plasma capable of effectively eliminating undesirable unevenness such that the center in the radial direction becomes a singular point in the plasma density distribution, and capable of freely controlling the plasma density distribution in a wide control range body treatment device. The capacitive coupling type plasma processing apparatus includes a main magnet unit and an auxiliary magnet unit above the upper electrode. The main magnet unit has a main yoke and a plurality of main electromagnetic coils. In the auxiliary magnet unit, a plurality of rod-shaped electromagnets are arranged at positions deviated from the central axis by a predetermined distance in the rotation direction at a position inward in the radial direction of the innermost main electromagnetic coil of the main magnet unit . Make a DC excitation current flow in the forward direction at a constant current value in the auxiliary solenoid coil of the first group of rod electromagnets, and make a DC excitation current at the same current value in the auxiliary solenoid of the second group of rod electromagnets. Reverse flow in the solenoid coil.

Description

technical field [0001] The invention relates to a capacitively coupled plasma processing device. Background technique [0002] In a manufacturing process of a semiconductor device, a plasma processing apparatus is used for applying a predetermined process to a substrate to be processed, such as a semiconductor wafer, by applying plasma of a processing gas to the substrate to be processed. Conventionally, capacitively coupled plasma etching apparatuses have been often used for single-wafer plasma etching. [0003] Generally, in a capacitively coupled plasma processing apparatus, an upper electrode and a lower electrode are arranged in parallel in a processing container constituting a vacuum chamber, and a semiconductor wafer is placed on the lower electrode, and a gap between the two electrodes is placed. Apply high frequency power. Then, between the two electrodes, the processing gas generates plasma under the action of high-frequency discharge, and uses the free radicals ...

AI Technical Summary

Problems solved by technology

In particular, there is no structure for effectively solving the conventional problem that the center of the plasma density in the radial direction is abnormally prominent and high (that is, the center becomes a singular point).

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