Antimony compound doping method of cigs

An antimony compound and compound technology, applied in the field of solar thin film cells, can solve the problems of poor Sb diffusion uniformity, high cost, solution loss, etc., and achieve the effects of easy control of doping amount, improvement of light-to-electricity conversion efficiency, and reduction of volatilization

Active Publication Date: 2017-09-19
江苏先能材料有限公司
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  • Description
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Problems solved by technology

[0003] However, the above-mentioned doping method has the following problems: first, the process of preparing the chemical solution of Sb is more complicated and the cost is higher; Above, the uniformity of spraying is poor, resulting in a large amount of solution loss; third, the annealing treatment diffuses Sb atoms into the CIGS film, and the diffusion uniformity of Sb during the diffusion process is poor and slow; fourth, the entire process is complicated and the cost is relatively high , is not conducive to large-scale production of CIGS thin film solar cells doped with Sb

Method used

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  • Antimony compound doping method of cigs
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  • Antimony compound doping method of cigs

Examples

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Effect test

Embodiment 1

[0040] This embodiment provides a CuIn 0.7 Ga 0.3 Se 2 Doped with 1at% Sb 2 Te 3 method, which includes the following steps:

[0041] Step 1, preparing CIGS compound.

[0042] First, Cu, In, Ga, and Se are weighed according to the weight ratio of 19.7%: 24.9%: 6.5%: 48.9%. In order to improve the quality of CIGS products, Cu, In, Ga, and Se all use ≥99.99% purity. Preferably, Cu, In, Ga, Se are all pulverized so that they can be well mixed.

[0043] Secondly, place the above four components in a container so that the vacuum in the container reaches 1.8×10 -3 Pa, and then keep the container in a closed state. The container is preferably a high-purity quartz tube.

[0044] Again, put the container into a heating device for heating. In this embodiment, the heating device adopts a resistance heating furnace. The container was heated at a rate of temperature increase of 80°C / hour to bring the temperature inside the container to 1158°C. When the vessel reached 1158°C, it ...

Embodiment 2

[0063] This embodiment provides a CuIn 0.6 Ga 0.4 Se 2 Doped with 4at% Sb 2 Te 3 method, which includes the following steps:

[0064] Step 1, preparing CIGS compound.

[0065] First, Cu, In, Ga, and Se are weighed according to the weight ratio of 20%: 21.6%: 8.8%: 49.6%. In order to improve the quality of CIGS products, Cu, In, Ga, and Se all use ≥99.99% purity. Preferably, Cu, In, Ga, Se are all pulverized so that they can be well mixed.

[0066] Secondly, the above four components are placed in a high-purity quartz tube container, so that the vacuum degree in the container reaches 2.5×10 -3 Pa, and then keep the container in a closed state. Containers are preferably used.

[0067] Again, put the container into a heating device for heating. In this embodiment, the heating device adopts a resistance heating furnace. The container was heated at a rate of temperature increase of 80°C / hour so that the temperature inside the container reached 1169°C. When the vessel rea...

Embodiment 3

[0085] This embodiment provides a CuIn 0.7 Ga 0.3 Se 2 Doped with 2at% Sb 2 Se 3 method, which includes the following steps:

[0086] Step 1, preparing CIGS compound.

[0087] Firstly, Cu, In, Ga, Se with purity ≥ 99.99% are weighed according to the weight ratio of 19.7%: 24.9%: 6.5%: 48.9%.

[0088] Secondly, place the above four components in a container so that the vacuum in the container reaches 1.8×10 -3 Pa, and then keep the container in a closed state.

[0089] Again, put the container into a heating device for heating. In this embodiment, the heating device adopts a resistance heating furnace. The container was heated at a rate of temperature increase of 80°C / hour to bring the temperature inside the container to 1158°C. When the vessel reached 1158°C, it was held at that temperature for 3 hours to allow the components to react. While maintaining a high temperature of 1158 ° C, the container is constantly vibrating at a frequency of 0.5 Hz, so that the componen...

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Abstract

The invention provides an antimony compound doping method of CIGS, which belongs to the technical field of thin-film solar cells. The antimony compound doping method of the CIGS comprises the steps of: firstly, mixing an antimony compound with a CIGS compound according to required doping amount to obtain a mixture; secondary, smashing the mixture to obtain powder materials; and finally subjecting the powder materials to hot pressed sintering to obtain the CIGS compound doped with the antimony compound. Through the method, the CIGS compound can be doped with the antimony compound evenly, and the conversion efficiency of solar cells can be improved when the thin-film solar cells are manufactured by using raw materials prepared by adopting the method.

Description

technical field [0001] The invention relates to the technical field of solar thin film batteries, in particular to a CIGS antimony compound doping method. Background technique [0002] Copper indium gallium selenide (CIGS) has been used as a thin-film solar cell for nearly two decades. Compared with other thin-film solar cell materials, it has the characteristics of wide absorption spectrum and high energy band adjustability. CIGS is a new generation with Thin-film solar cell materials with broad application potential. How to improve the conversion efficiency of CIGS thin-film solar cells has always been a key issue in this technology, because it directly affects the application cost and commercial value of the cells. At present, the method of doping antimony (Sb) elements into CIGS materials is mainly based on IBM's doping method, that is, the chemical solution containing Sb is sprayed on the CIGS film by rotating the turntable, and then the Sb solution is sprayed. The CI...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L21/385
CPCH01L21/385H01L31/0323Y02E10/541
Inventor 李宗雨丘立安
Owner 江苏先能材料有限公司
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