Terahertz sensor based on tunneling transistor structure

Abstract

The invention provides a terahertz sensor based on a tunneling transistor structure. When a substrate of the tunneling transistor structure is P type / N type, a source region formed by ion implantation is P+ type / N+ type, and a drain region formed by ion implantation is accordingly N+ type / P+ type. A silicon dioxide insulation layer is grown and a polycrystalline silicon gate oxide layer is deposited on the source region. The area of the source region is greater than the area of the drain region. According to the novel terahertz sensor, the barrier width at a tunneling junction is controlled by the gate voltage to enable electrons in the source region to reach a conduction band of a channel region through tunneling, thus starting the terahertz sensor. Based on the nonlinear relationship between the startup current and the gate voltage, high-frequency frequency signals can be rectified. The novel terahertz sensor based on a tunneling transistor structure is quick in response and low in equivalent noise power, and can better meet the demand of high-frequency applications.

Description

technical field [0001] The invention relates to a tunneling transistor terahertz signal sensor, in particular to a terahertz signal sensor based on a tunneling transistor structure, which can obtain good voltage response and low noise power at frequencies above 1THz. Background technique [0002] Terahertz rays are a kind of rays between microwaves and infrared rays. They have significant advantages such as high frequency, strong penetrating ability, and no biological damage. They have great applications in broadband communication, radar, electronic countermeasures, medical imaging, security inspection, etc. application market. Terahertz detectors, which are the core components of terahertz imaging technology, have always received extensive attention from the scientific community. The current terahertz detectors include thermal radiometers, photophonon detectors, pyroelectric detectors, Schottky barrier diode electron detectors, etc. Most of these terahertz detectors requir...

AI Technical Summary

Problems solved by technology

The Si tunneling transistor with the PIN structure mainly used at present has a small tunneling current (-7 A), its terahertz response is relatively low

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