GaN light-emitting device and fabrication method thereof

Abstract

The invention discloses a GaN light-emitting device and a fabrication method thereof. The GaN light-emitting device comprises a substrate, an upper electrode layer and a lower electrode layer, wherein the upper electrode layer is formed on the substrate, the lower electrode layer is formed on the lower part of the substrate, the substrate comprises a positive pyramid structure layer, a buffer reflection layer, a light-emitting layer and a transparent conductive oxide layer from bottom to top, and the positive pyramid structure layer comprises a plurality of positive pyramid structures arranged periodically. By the GaN light-emitting device, high-quality epitaxial GaN can be obtained, and a light-emitting diode with a low cost and high efficiency can be manufactured.

Description

technical field [0001] The invention belongs to the field of semiconductor device preparation, in particular to a GaN light-emitting device and a preparation method thereof. Background technique [0002] In recent years, the third-generation semiconductor materials represented by Group III nitrides and their photoelectric functional devices have shown an increasingly important leading role in important fields such as energy conservation and environmental protection, and are the key to supporting the development of the next generation of strategic emerging industries. Base. [0003] III-nitride series materials have shown great advantages in the field of key photoelectric devices for high-efficiency energy utilization in semiconductor lighting. Controlled growth and how to reduce the cost of device manufacturing process and other key scientific and technical issues. Therefore, seeking to explore new nitride heteroepitaxy substrate materials and processes has decisive signif...

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Problems solved by technology

However, the quality of GaN single crystal films grown on Si substrates is far inferior to that of sapphire substrates. The main problem is that the thermal mismatch between Si and GaN is as high as 114%, which is much higher than that of sapphire (about -25.5%), which will lead to Huge tensile stress and cracking of the epitaxial film

[0005] figure 1 It is the structural diagram of the existing GaN light-emitting device, using Si(111) substrate for epitaxy, which is not compatible with the existing Si process (mostly using (100)Si), and the buffer layer usually requires many layers to reduce Si and The mismatch effect of epitaxial GaN material, the dislocation density of epitaxial material is relatively high, the quality of epitaxial structure is reduced, and the production cost is high

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