Gate integrated driving circuit, repairing method thereof, display panel and display device

A gate integrated drive and circuit technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of electrostatic breakdown in the channel area, abnormal panel display, and abnormal output, etc., to improve product yield and repair. bad effect

Active Publication Date: 2018-06-29
BOE TECH GRP CO LTD +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the shift registers in the gate integrated circuit are composed of multiple thin-film transistors (Thin-film Transistor, TFT for short) and capacitors, and are shift-registered, in the actual production process, when a certain shift register When a TFT device is damaged, such as channel adhesion, it will cause abnormal operation of the shift register of this row. According to the principle of GOA shift register, the damaged shift register of this row will not be able to pull down the shift register of the previous row. output, also cannot charge the next row of shift registers, resulting in abnormal output of the bad row and below, which will cause the entire gate integrated drive circuit to work abnormally. If channel adhesion occurs in the pixel, according to the display mode, the pixel will be In addition, some foreign matter such as dust particles will cause electrostatic breakdown in the channel area of ​​the TFT device, and electrostatic breakdown will also cause abnormal display on the panel.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gate integrated driving circuit, repairing method thereof, display panel and display device
  • Gate integrated driving circuit, repairing method thereof, display panel and display device
  • Gate integrated driving circuit, repairing method thereof, display panel and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] Specific implementations of the gate integrated drive circuit, its repair method, display panel and display device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0036] An embodiment of the present invention provides a gate integrated drive circuit, such as figure 2 As shown, including: a plurality of shift registers 1 cascaded;

[0037] Each shift register 1 is provided with at least one repairing thin film transistor 2 inside; the repairing thin film transistor 2 is used to replace a defective thin film transistor in the shift register 1 .

[0038] In the above gate integrated circuit provided in the embodiment of the present invention, when the thin film transistor in the shift register is defective, the repairing thin film transistor provided in the gate integrated circuit provided in the embodiment of the present invention can be effectively repaired , work instead of the defec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a gate integrated drive circuit, its repair method, a display panel and a display device. The gate integrated drive circuit comprises: a plurality of shift registers arranged in cascade; each shift register is internally provided with at least one A repair thin film transistor; the repair thin film transistor is used to replace a defective thin film transistor in the shift register. When the thin film transistor in the shift register is defective, the repairing thin film transistor provided in the embodiment of the present invention can be effectively repaired to replace the defective thin film transistor to work. Therefore, the repairing thin film transistor can repair the defect, thereby improving the gate Product yield of integrated driver circuits.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a gate integrated driving circuit, a repair method thereof, a display panel and a display device. Background technique [0002] Currently, display technologies are widely used in displaying televisions, mobile phones, and public information, and display panels for displaying images are also various, and can display rich and colorful images. More and more display panels, such as Thin Film Transistor-Liquid Crystal Display (TFT-LCD for short), Organic Light Emitting Diode (OLED for short), etc., need to use gate integration Gate Driver on Array (GOA for short) technology integrates the gate driver circuit on the glass substrate in the display panel to form a scanning drive for the display panel, thereby reducing product cost in terms of material cost and manufacturing process. [0003] figure 1 A schematic layout diagram of an existing gate integrated drive circuit is shown. Si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/20G09G3/36G09G3/3208
CPCG09G3/006G09G3/3266G09G3/3677G11C29/74G09G2300/0408G09G2310/0286G09G2330/08H01L29/41733H01L22/22G02F1/136268H10K71/00H10K71/861G02F1/13306G02F1/136259G09G3/3225G09G3/3648G09G2300/04G11C19/28
Inventor 许睿陈小川王磊李静
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products