Soft driving method of power MOSFET and circuit

Abstract

The invention discloses a soft driving method of a power MOSFET and a corresponding circuit. In a period from when the MOSFET starts to be electrified till a Miller platform is finished, soft driving current I1 is very small, a conduction process of the MOSFET is delayed, and EMI is reduced; when the MOSFET exits from the Miller platform, driving current and positive feedback large current I2 are superposed, the superposed large current is used to charge an MOSFET input capacitor, VGS voltage rises quickly, unnecessary charge consumption is reduced, i.e., conduction loss is reduced, and efficiency is improved; and after the VGS voltage rises to the highest driving voltage, the positive feedback large current I2 quickly reduces to zero. The method and the circuit provided by the invention achieve very good beneficial effects in reduction of an EMI effect, reduction of conduction loss and improvement of efficiency.

Description

technical field [0001] The invention relates to a soft driving method and circuit, in particular to a gate soft driving method and circuit applied to power MOSFETs. Background technique [0002] Driving circuit design is one of the key points in the application of power MOSFETs, and the gate driving process of MOSFETs can be simply understood as the charging and discharging process of the driving power supply to the MOSFET input capacitance. Get the static parameters. However, in practical applications, the parameters of these capacitors are nonlinear functions of temperature and voltage, and affected by the Miller effect, the total dynamic input capacitance will be much larger than the total static capacitance. All of these have brought great difficulties to the accurate analysis of gate drive. But from an application point of view, it is necessary to understand the characteristics of its driving process. [0003] Such as figure 1 As shown, it is the inter-electrode cap...

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Problems solved by technology

like Figure 4a , Figure 4b and Figure 5a , Figure 5b As shown, it is the simulation curve of the gate drive process of the gate drive circuit of an existing switching power supply flyback converter working under CCM and DCM, t0-t1 is the time to reach the threshold voltage, t1-t2 bits enter The time of the Miller platform, t2-t3 is the time of the Miller platform, and t3-t4 is the time of exiting the Miller platform. It can be seen that the time period t3-t4 for exiting the Miller platform after the MOSFET is fully turned on is 150ns and 180ns. This period of time is too long, resulting in a large conduction loss (conduction loss refers to the loss caused by the voltage drop generated by the load current (ie, drain-source current) IDSon(t) on the on-resistance RDSon after the MOSFET is fully turned on), Especially after the MOSFET working under CCM is fully turned on, IDS does not start to r

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