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Method for preparing porous silicon carbide ceramic based on template

A porous silicon carbide and template technology, which is applied in the field of preparing porous silicon carbide ceramics using templates, can solve the problems of complex preparation process and high sintering temperature, and achieve the effect of complex preparation process, controllable porosity and easy preparation

Inactive Publication Date: 2016-01-13
NORTHWESTERN POLYTECHNICAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve technical problems such as complex preparation process and high sintering temperature in the prior art of porous silicon carbide ceramics, the present invention proposes a method of using a template, and then depositing SiC ceramic phases on the template to form porous silicon carbide ceramics. A method for growing SiC nanowires inside porous ceramics to obtain porous SiC ceramics with a larger specific surface area

Method used

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  • Method for preparing porous silicon carbide ceramic based on template
  • Method for preparing porous silicon carbide ceramic based on template
  • Method for preparing porous silicon carbide ceramic based on template

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Step 1: Raw material preparation: The template is made of nickel foam with a porosity of 40%.

[0026] Step 2: Process the template into a specified shape.

[0027] Step 3: Put the templates of different shapes obtained in step 2 into a chemical vapor infiltration furnace (CVI furnace) for chemical vapor infiltration. During the CVI process, the generated SiC ceramic phase gradually covers the template. When the generated SiC ceramic phase When reaching a certain level, porous SiC ceramics with certain strength and controllable porosity can be formed. The process conditions for CVI method to generate SiC ceramic phase are: using MTS(CH 3 SiCl 3 ) as a precursor, hydrogen as a carrier and dilution gas, and argon as a protective gas. MTS:H 2 The ratio of :Ar is 1:12:10, the total gas pressure is 5kPa, the deposition temperature is 1000°C, and the deposition time is 20h.

[0028] Step 4: Remove the template. The obtained porous SiC ceramics are acidified.

[0029] S...

Embodiment 2

[0031] Step 1: Preparation of raw materials: The template is made of nickel foam with a porosity of 60%.

[0032] Step 2: Process the template into a specified shape.

[0033] Step 3: Put the templates of different shapes obtained in step 2 into a chemical vapor infiltration furnace (CVI furnace) for chemical vapor infiltration. During the CVI process, the generated SiC ceramic phase gradually covers the template. When the generated SiC ceramic phase When reaching a certain level, porous SiC ceramics with certain strength and controllable porosity can be formed. The process conditions for CVI method to generate SiC ceramic phase are: using MTS(CH 3 SiCl 3 ) as a precursor, hydrogen as a carrier and dilution gas, and argon as a protective gas. MTS:H 2 The ratio of :Ar is 1:12:10, the total gas pressure is 5kPa, the deposition temperature is 1000°C, and the deposition time is 50h.

[0034] Step 4: Remove the template. The obtained porous SiC ceramics are acidified.

[0035]...

Embodiment 3

[0037] Step 1: Preparation of raw materials: The template is made of nickel foam with a porosity of 70%.

[0038] Step 2: Process the template into a specified shape.

[0039] Step 3: Put the templates of different shapes obtained in step 2 into a chemical vapor infiltration furnace (CVI furnace) for chemical vapor infiltration. During the CVI process, the generated SiC ceramic phase gradually covers the template. When the generated SiC ceramic phase When reaching a certain level, porous SiC ceramics with certain strength and controllable porosity can be formed. The process conditions for CVI method to generate SiC ceramic phase are: using MTS(CH 3 SiCl 3 ) as a precursor, hydrogen as a carrier and dilution gas, and argon as a protective gas. MTS:H 2 The ratio of :Ar is 1:12:10, the total gas pressure is 5kPa, the deposition temperature is 1100°C, and the deposition time is 20h.

[0040] Step 4: Remove the template. The obtained porous SiC ceramics are acidified.

[004...

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Abstract

The present invention relates to a method for preparing a porous silicon carbide ceramic based on a template. According to the present invention, the template method thinking and the characteristics of the CVI process are creatively combined, the CVI method is used to prepare the porous SiC ceramic, and the porous SiC ceramic obtained through the method has characteristics of uniform pore size, controlled porosity and large specific surface area; with the method, the technical problems of complex preparation process, high sintering temperature and the like of other template methods can be solved; and the complex member is easily prepared through the process, and the use range of the porous SiC ceramic prepared through the method is substantially expanded.

Description

technical field [0001] The invention belongs to a method for preparing porous silicon carbide ceramics, in particular to a method for preparing porous silicon carbide ceramics by using a template. Background technique [0002] Porous silicon carbide ceramics is a new type of ceramic material with a large number of interconnected or closed pore structures inside. It is widely used in industry because of its low density, high strength, large specific surface area, excellent thermal stability and chemical stability. , such as hot gas particulate filters, molten metal filters, catalyst supports, gas combustion media, lightweight structural components, etc. [0003] There are many methods to prepare porous SiC ceramics, such as sintering method, foaming method, bonding method, template method and so on. In order to better control the porosity, pore size distribution and pore morphology of porous SiC ceramics, the template method has gradually become a research hotspot. The temp...

Claims

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Application Information

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IPC IPC(8): C04B38/06C04B35/565
Inventor 刘永胜万佳佳董宁张青门静成来飞张立同
Owner NORTHWESTERN POLYTECHNICAL UNIV
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