A kind of preparation method of quasi-three-dimensional structure moisture sensitive film
A humidity-sensitive thin film, quasi-three-dimensional technology, applied in the field of preparation of quasi-three-dimensional structured moisture-sensitive thin film, can solve the problems of limiting the application of semiconductor-type humidity-sensitive materials, long response recovery time, long response recovery time, etc., and achieve high response recovery speed , The response recovery time is short, and the effect of improving the response recovery speed
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Embodiment 1
[0042] A preparation method of a quasi-three-dimensional structure humidity-sensitive film, which comprises the following steps:
[0043] Step 1, preparing solvent: put water and anhydrous acetic acid into a container and mix them evenly as a solvent, then heat the solvent in a water bath and control its temperature to 80°C; in this example, the volume ratio of water and anhydrous acetic acid is 1:2;
[0044] Step 2, preparing Mn-Co-Ni-O ternary transition metal oxide precursor solution: under the condition of magnetically stirring the solvent of step 1, adding manganese acetate, nickel acetate and cobalt acetate to the solvent to form Mn -Co-Ni-O ternary transition metal oxide precursor solution; in this embodiment, in manganese acetate, nickel acetate and cobalt acetate, the molar ratio of manganese, nickel and cobalt is 36:16:8; wherein, the formed The concentration of the Mn-Co-Ni-O ternary transition metal oxide precursor solution is 0.3mol / L; in this embodiment, the spee...
Embodiment 2
[0051] A preparation method of a quasi-three-dimensional structure humidity-sensitive film, which comprises the following steps:
[0052] Step 1, preparing solvent: Put water and anhydrous acetic acid into a container and mix them evenly as a solvent, then heat the solvent in a water bath and control its temperature to 75°C; in this example, the volume ratio of water and anhydrous acetic acid is 1:3;
[0053] Step 2, preparing Mn-Co-Ni-O ternary transition metal oxide precursor solution: under the condition of magnetically stirring the solvent of step 1, adding manganese acetate, nickel acetate and cobalt acetate to the solvent to form Mn -Co-Ni-O ternary transition metal oxide precursor solution; in this embodiment, in manganese acetate, nickel acetate and cobalt acetate, the molar ratio of manganese, nickel and cobalt is 35:15:6; wherein, the formed The concentration of the Mn-Co-Ni-O ternary transition metal oxide precursor solution is 0.1mol / L; in this embodiment, the spee...
Embodiment 3
[0060] A preparation method of a quasi-three-dimensional structure humidity-sensitive film, which comprises the following steps:
[0061] Step 1, preparing the solvent: put water and anhydrous acetic acid into a container and mix them evenly as a solvent, then heat the solvent in a water bath and control its temperature to 85°C; in this example, the volume ratio of water and anhydrous acetic acid is 1:2.5;
[0062] Step 2, preparing Mn-Co-Ni-O ternary transition metal oxide precursor solution: under the condition of magnetically stirring the solvent of step 1, adding manganese acetate, nickel acetate and cobalt acetate to the solvent to form Mn -Co-Ni-O ternary transition metal oxide precursor solution; in this embodiment, in manganese acetate, nickel acetate and cobalt acetate, the molar ratio of manganese, nickel and cobalt is 37:17:10; wherein, the formed The concentration of the Mn-Co-Ni-O ternary transition metal oxide precursor solution is 0.5mol / L; in this embodiment, t...
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