Formation method of interconnect structure

Abstract

The invention provides a method for forming an interconnection structure, comprising: providing a substrate, forming a material layer; removing part of the material layer to form an opening; forming a catalyst layer; removing the material layer and the catalyst layer on the surface of the material layer to expose part of the substrate ; forming a conductive plug of carbon nanotube material on the remaining catalyst layer; forming an interlayer dielectric layer. The beneficial effect of the present invention is that, before forming the conductive plug of the carbon nanotube material, the redundant catalyst layer is removed, so that only the carbon nanotube material of the conductive plug part is formed. Compared with the prior art, there is no need to increase the step of removing other parts of the carbon nanotube material after forming the conductive plug, which can minimize the impact on the conductive plug of the carbon nanotube material that needs to be retained, for example, to ensure The morphology of the formed carbon nanotubes and the curvature of the tube wall, etc., can further ensure the performance of the conductive plug of the formed carbon nanotube material.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming an interconnection structure. Background technique [0002] With the continuous shrinking of the size of electronic components and the improvement of circuit integration, copper, which has lower resistivity, better resistance to electricity and stronger migration ability, has been used as the material of the conductive structure in the prior art. However, as the feature size is further reduced, the current density carried by the interconnection line is increasing, and copper has become increasingly difficult to meet the needs of further improving the performance of the interconnection line. [0003] At the same time, carbon nanotubes (Carbon Nano Tubes, CNT) have gradually become a research topic due to their good thermal and electrical properties such as graphite-like tube walls, nanoscale pores, quantum size effects, high current density, and high...

AI Technical Summary

Problems solved by technology

However, with the further reduction of the feature size, the current density carried by the interconnection line is getting larger and larger, and it is becoming more and more difficult for copper to meet the needs of further improving the performance of the interconnection line.

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