UV light emitting diode
A technology of light-emitting diodes and ultraviolet light, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as uneven injection of electrons and holes, increased driving voltage of light-emitting diodes, and deterioration of internal quantum efficiency
Active Publication Date: 2019-12-20
SEOUL VIOSYS CO LTD
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Problems solved by technology
Therefore, the driving voltage of the light-emitting diode increases, and electrons and holes are injected into the well layer unevenly, resulting in deterioration of the internal quantum efficiency.
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[0045] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following exemplary embodiments are provided by way of illustration in order to fully convey the spirit of the present invention to those skilled in the art to which the present invention pertains. Accordingly, the present invention is not limited to the embodiments disclosed herein, but may be implemented in various forms. In the drawings, the width, length, thickness, etc. of elements may be exaggerated for clarity and ease of description. When an element or layer is referred to as being "on" or "on" another element or layer, it can be directly "on" or "on" another element or layer, or intervening elements or layers may be present. element. Throughout the specification, like reference numerals designate like elements having the same or similar functions. On the other hand, herein, the content of a metal element (Al or In) expresse...
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An ultraviolet light emitting diode with improved internal quantum efficiency is provided. The ultraviolet light emitting diode includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including an AlGaN layer or an AlInGaN layer; and an active region with a multi-quantum well structure, wherein the active region includes alternating The well layer and the barrier layer are stacked on each other in a manner, and the well layer includes electrons and holes that exist according to their probability distribution functions. The barrier layer is formed of AlInGaN or AlGaN and has an Al content of 10%-30%; at least one of the barrier layers has a thickness smaller than one of the well layers; the thickness and bandgap of at least one of the barrier layers prevent injection into the barrier layer layer in an adjacent well layer and limit electrons and holes therein from diffusing into another adjacent well layer, thereby reducing the driving voltage of the UV light-emitting diode and improving internal quantum efficiency.
Description
[0001] This application claims priority and benefit from Korean Patent Application No. 10-2014-0096626 filed on July 29, 2014, which is hereby incorporated by reference in its entirety. technical field [0002] Exemplary embodiments relate to UV light emitting diodes. More specifically, exemplary embodiments relate to UV light emitting diodes with improved internal quantum efficiency. More particularly, exemplary embodiments relate to UV light emitting diodes having improved electron and hole recombination efficiency in an active region. Background technique [0003] In general, gallium nitride (GaN) based semiconductors are widely used in UV, blue / green light-emitting diodes or laser diodes, which are used in many applications including full-color displays, traffic signs, general lighting and optical communication equipment Used as a light source. This GaN-based light emitting diode includes an InGaN-based active layer having a multi-quantum well structure between an n-ty...
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IPC IPC(8): H01L33/14H01L33/06H01L33/32
CPCH01L33/06H01L33/145H01L33/32H01L33/0008H01L33/14
Inventor 韩昌锡李阿兰车金华睦
Owner SEOUL VIOSYS CO LTD