Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in the semiconductor field, can solve the problems of uneven etching, difficulty in controlling the thickness of the dielectric layer, and difficulty in controlling the over-etching of the metal layer, and achieve the effect of improving performance
Active Publication Date: 2018-06-29
CSMC TECH FAB2 CO LTD
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Problems solved by technology
However, due to the different thicknesses of the layers in different areas, it is difficult to control the etching rate in different areas, resulting in uneven etching of the entire film.
Moreover, the overetching of the metal layer is also difficult to control, and it is difficult to control the thickness of the remaining dielectric layer
Method used
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[0023] Next, the present invention will be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
[0024] It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer. A layer may be on, adjacent to, connected to, or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when a...
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The invention discloses a semiconductor device and a manufacturing method thereof. The method includes: a) providing a semiconductor substrate having a photoelectric region and an active region on the semiconductor substrate; b) sequentially forming a first layer covering at least the photoelectric region and the active region on the photoelectric region. a dielectric layer and the first polysilicon layer; c) forming at least one wiring layer on the first polysilicon layer, and patterning the wiring layer of the photoelectric region until the first polysilicon layer is exposed A polysilicon layer, wherein each layer of the wiring layer includes an interlayer dielectric layer and a metal interconnection layer with an interconnection pattern on the interlayer dielectric layer, and the metal interconnection layer has a corresponding an opening of the photoelectric region; and d) etching the first polysilicon layer of the photoelectric region until the first dielectric layer is exposed. The method can ensure that the thickness of the dielectric layer finally formed on the photoelectric region meets the requirements, and improves the performance of the semiconductor device.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the continuous development of optoelectronic products and the requirement of integration, it is desirable to integrate devices in the photoelectric region (such as photodiodes) and devices in the active region (such as CMOS devices). A photodiode is basically a p-n junction or metal-semiconductor contact working in reverse bias. When a light signal hits the photodiode, the depletion region will separate the electron-hole pairs generated by the light, so there is current flows to the external circuit. The dielectric layer on the photoelectric region needs to be uniform and the thickness needs to be strictly controlled, generally it should be an integer multiple of 1 / 4 of the light wavelength. [0003] In the process of manufacturing such an integrated device in the existi...
Claims
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IPC IPC(8): H01L27/146
Inventor 胡守时陈永南房世林
Owner CSMC TECH FAB2 CO LTD