Unlock instant, AI-driven research and patent intelligence for your innovation.

High voltage schottky diode

A Schottky diode and Schottky contact technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low reverse bias voltage, increase in size, large reverse leakage current, etc., to reduce leakage current, The effect of increasing the concentration and increasing the breakdown voltage

Active Publication Date: 2016-02-24
CHENGDU 90 DEGREE IND PROD DESIGN CO LTD
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The biggest disadvantage of Schottky diodes is their low reverse bias voltage and large reverse leakage current. For Schottky diodes made of silicon and metal, their reverse bias rated withstand voltage is only up to 50V. , while the reverse leakage current value has a positive temperature characteristic, which tends to increase rapidly as the temperature rises

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High voltage schottky diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] All the features disclosed in this specification, or all disclosed methods or steps in the process, except for mutually exclusive features and / or steps, can be combined in any manner.

[0036] Any feature disclosed in this specification (including any additional claims and abstract), unless specifically stated, can be replaced by other equivalent or alternative features with similar purposes. That is, unless otherwise stated, each feature is just one example of a series of equivalent or similar features.

[0037] Such as figure 1 , The high-voltage Schottky diode of the present invention includes a substrate, an epitaxial layer, a metal contact layer, and a protective layer; an epitaxial layer is epitaxially grown on the upper surface of the substrate; a plurality of trenches are formed in the epitaxial layer at intervals; The metal contact layer is provided on the upper surface of the epitaxial layer; both ends of the metal contact layer are provided with an ohmic contact ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high voltage schottky diode, which is characterized by comprising a substrate, an epitaxial layer, a metal contact layer and a protective layer. The upper surface of the substrate is provided with an epitaxial layer through epitaxial growth; a plurality of grooves are arranged in the epitaxial layer at intervals; the metal contact layer is arranged on the upper surface of the epitaxial layer; two ends of the metal contact layer are provided with ohmic contact metal; the schottky contact metal is arranged in the center part of the metal contact layer; an active layer is positioned between the ohmic contact metal and the schottky contact metal; the upper surface of the schottky contact metal is provided with a protective layer; the ohmic contact is the cathode of the high voltage schottky diode; and the schottky contact is the anode of the high voltage schottky diode. The high voltage schottky diode can improve the reverse bias voltage, and reduces the reverse leakage current.

Description

Technical field [0001] The invention relates to a Schottky diode, in particular to a Schottky diode capable of providing high voltage and a preparation method of the high voltage Schottky diode. Background technique [0002] Schottky diode, also known as Schottky barrier diode (SBD), is a low-power, ultra-high-speed semiconductor device. The most notable feature is the extremely short reverse recovery time (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, protection diodes, and also useful as rectifier diodes and small signal detection diodes in circuits such as microwave communications. It is more common in communication power supplies, inverters, etc. [0003] Schottky diodes are metal-semiconductor devices made of precious metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode. The barrier...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/45H01L29/47H01L21/329
CPCH01L29/45H01L29/47H01L29/66143H01L29/8725
Inventor 卢晔
Owner CHENGDU 90 DEGREE IND PROD DESIGN CO LTD